All Transistors. RN4909FE Datasheet

 

RN4909FE Datasheet and Replacement


   Type Designator: RN4909FE
   SMD Transistor Code: VJ
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN*PNP
   Built in Bias Resistor R1 = 47 kOhm
   Built in Bias Resistor R2 = 22 kOhm
   Typical Resistor Ratio R1/R2 = 2.1
   Maximum Collector Power Dissipation (Pc): 0.1 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 15 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 200 MHz
   Collector Capacitance (Cc): 3 pF
   Forward Current Transfer Ratio (hFE), MIN: 70
   Noise Figure, dB: -
   Package: SOT563 ES6
      - BJT Cross-Reference Search

   

RN4909FE Datasheet (PDF)

 ..1. Size:103K  toshiba
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RN4909FE

RN4909FE TOSHIBA Transistor Silicon PNP NPN Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor) RN4909FE Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications Two devices are incorporated into an Extreme-Super-Mini (6-pin) package. Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts

 8.1. Size:146K  toshiba
rn4909.pdf pdf_icon

RN4909FE

RN4909 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) RN4909 Switching, Inverter Circuit, Interface Circuit Unit: mmAnd Driver Circuit Applications Includeing two devices in US6 (ultra super mini type with 6 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing pr

 9.1. Size:83K  toshiba
rn4902.pdf pdf_icon

RN4909FE

RN4902 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) RN4902 Switching, Inverter Circuit, Interface Circuit Unit: mmAnd Driver Circuit Applications Includeing two devices in US6 (ultra super mini type with 6 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing pr

 9.2. Size:103K  toshiba
rn4906fe.pdf pdf_icon

RN4909FE

RN4906FE TOSHIBA Transistor Silicon PNP NPN Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor) RN4906FE Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications Two devices are incorporated into an Extreme-Super-Mini (6-pin) package. Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: KRA567U | UN621K | D11C1053 | CHDTA115TEGP | ZTX300 | BD544D | C9081

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