RN49P1FS Datasheet, Equivalent, Cross Reference Search
Type Designator: RN49P1FS
SMD Transistor Code: X0
Material of Transistor: Si
Polarity: Pre-Biased-NPN*PNP
Built in Bias Resistor R1 = 10 kOhm
Built in Bias Resistor R2 = 10 kOhm
Typical Resistor Ratio R1/R2 = 1
Maximum Collector Power Dissipation (Pc): 0.05
W
Maximum Collector-Base Voltage |Vcb|: 20
V
Maximum Collector-Emitter Voltage |Vce|: 20
V
Maximum Emitter-Base Voltage |Veb|: 5
V
Maximum Collector Current |Ic max|: 0.05
A
Max. Operating Junction Temperature (Tj): 150
°C
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: SOT963
FS6
RN49P1FS Transistor Equivalent Substitute - Cross-Reference Search
RN49P1FS Datasheet (PDF)
rn49p1fs.pdf
RN49P1FS TOSHIBA Transistor Silicon NPNPNP Epitaxial Type Preliminary (PCT Process) (Transistor with Built-in Bias Resistor) RN49P1FS Switching, Inverter Circuit, Interface Circuit and Driver Unit: mmCircuit Applications 1.00.050.80.05 0.10.05 0.10.05 Two devices are incorporated into a fine-pitch, Small-Mold (6-pin) package. 1 6 Incorporating a bias
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: RT1P436C
