All Transistors. RN49P1FS Datasheet

 

RN49P1FS Datasheet and Replacement


   Type Designator: RN49P1FS
   SMD Transistor Code: X0
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN*PNP
   Built in Bias Resistor R1 = 10 kOhm
   Built in Bias Resistor R2 = 10 kOhm
   Typical Resistor Ratio R1/R2 = 1
   Maximum Collector Power Dissipation (Pc): 0.05 W
   Maximum Collector-Base Voltage |Vcb|: 20 V
   Maximum Collector-Emitter Voltage |Vce|: 20 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.05 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 60
   Noise Figure, dB: -
   Package: SOT963 FS6
 

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RN49P1FS Datasheet (PDF)

 ..1. Size:148K  toshiba
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RN49P1FS

RN49P1FS TOSHIBA Transistor Silicon NPNPNP Epitaxial Type Preliminary (PCT Process) (Transistor with Built-in Bias Resistor) RN49P1FS Switching, Inverter Circuit, Interface Circuit and Driver Unit: mmCircuit Applications 1.00.050.80.05 0.10.05 0.10.05 Two devices are incorporated into a fine-pitch, Small-Mold (6-pin) package. 1 6 Incorporating a bias

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , BC546 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 2SD552 | FXT755SM | 2SD1682T

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