2SC5198 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC5198
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 100 W
Maximum Collector-Base Voltage |Vcb|: 140 V
Maximum Collector-Emitter Voltage |Vce|: 140 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 30 MHz
Collector Capacitance (Cc): 170 pF
Forward Current Transfer Ratio (hFE), MIN: 55
Noise Figure, dB: -
Package: TO3PN
2SC5198 Transistor Equivalent Substitute - Cross-Reference Search
2SC5198 Datasheet (PDF)
2sc5198.pdf
2SC5198 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5198 Power Amplifier Applications Unit: mm High breakdown voltage: VCEO = 140 V (min) Complementary to 2SA1941 Suitable for use in 70-W high fidelity audio amplifiers output stage Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 140 VCollector-em
2sc5198 2sa1941.pdf
Complementary NPN-PNP Power Bipolar Transistor R 2SC5198 2SA1941 APPLICATIONS Audio Products Home Amplifiers Home Receivers Auto Audio Amplifiers FEATURES VCEO=140V (min) High collector voltageVCEO
2sc5198.pdf
2SC5198Silicon NPN transistorPower Amplifier Applications Complementary to 2SA1941 High collector voltage:VCEO=140V (min) Recommended for 100-W high-fidelity audio frequency amplifierOutput stageNote1: Using continuously under heavy loads (e.g. the applicationof high temperature/current/voltage and the significant changein temperature, etc.) may cause this product to
2sc5198.pdf
2SC5198 Transistor Silicon NPN Epitaxial Type Power Amplifier Applications FEATURES * High collector voltage: Vceo=140V(min) * Recommended for 70W high-fidelity audio Frequency amplifier output * Complementary to 2SA1941 MAXIMUM RATINGS (Ta=25 ) Parameter Symbol Rating Unit Collector-Base Voltage VCBO 140 V Collector-Emitter Voltage VCEO 140 V Emitter-Base Voltage V
2sc5198.pdf
isc Silicon NPN Power Transistor 2SC5198DESCRIPTIONLow Collector Saturation Voltage-: V = 2.0V(Min) @I = 7ACE(sat) CGood Linearity of hFEComplement to Type 2SA1941Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsRecommend for 70W high fidelity audio frequencyamplifier output stage appli
2sc5198r 2sc5198o.pdf
2SC5198 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5198 Power Amplifier Applications Unit: mm High breakdown voltage: VCEO = 140 V (min) Complementary to 2SA1941 Suitable for use in 70-W high fidelity audio amplifiers output stage Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 140 VCollector-em
2sc5198b.pdf
RoHS 2SC5198B Series RoHS SEMICONDUCTORNell High Power ProductsSilicon NPN triple diffusion planar transistor10A/140V/100W15.60.44.80.29.62.00.13.20,12TO-3P(B)3+0.2+0.20.651.05-0.1-0.1FEATURESHigh breakdown voltage, VCEO =140V (min) 5.450.1 5.450.11.4Complementary to 2SA1941BB C ETO-3P package which can be installed to the heat
2sc5198t7tl.pdf
2SC5198T7TLSilicon NPN Power TransistorDESCRIPTIONLow Collector Saturation Voltage-: V = 2.0V(Min) @I = 7ACE(sat) CGood Linearity of hFEComplement to Type 2SA1941APPLICATIONSPower amplifier applicationsRecommend for 70W high fidelity audio frequencyamplifier output stage applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collect
2sc5198r 2sc5198o.pdf
SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor 2SC5198DESCRIPTIONLow Collector Saturation Voltage-: V = 2.0V(Min) @I = 7ACE(sat) CGood Linearity of hFEComplement to Type 2SA1941APPLICATIONSPower amplifier applicationsRecommend for 70W high fidelity audio frequencyamplifier output stage applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
