2N1175B Specs and Replacement
Type Designator: 2N1175B
Material of Transistor: Ge
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 35 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 100 °C
Electrical Characteristics
Transition Frequency (ft): 0.3 MHz
Collector Capacitance (Cc): 70 pF
Forward Current Transfer Ratio (hFE), MIN: 70
Package: TO5
2N1175B Substitution
- BJT ⓘ Cross-Reference Search
2N1175B datasheet
Detailed specifications: 2N117, 2N1170, 2N1171, 2N1172, 2N1173, 2N1174, 2N1175, 2N1175A, S8050, 2N1176, 2N1176A, 2N1176B, 2N1177, 2N1178, 2N1179, 2N118, 2N1180
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