2SC6075 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC6075
SMD Transistor Code: C6075
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 1.3 W
Maximum Collector-Base Voltage |Vcb|: 160 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 9 V
Maximum Collector Current |Ic max|: 2.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 150 MHz
Collector Capacitance (Cc): 14 pF
Forward Current Transfer Ratio (hFE), MIN: 180
Noise Figure, dB: -
Package: TPS
2SC6075 Transistor Equivalent Substitute - Cross-Reference Search
2SC6075 Datasheet (PDF)
2sc6075.pdf
2SC6075 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6075 Power Amplifier Applications Unit: mmPower Switching Applications Low collector emitter saturation voltage : VCE (sat) = 0.5 V (max)IC = 1A High-speed switching: tstg = 0.4 s (typ) www.DataSheet4U.comAbsolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating UnitCollector-base voltage VCBO 160
2sc6077.pdf
2SC6077 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC6077 Power Amplifier Applications Unit: mm Power Switching Applications Low collector saturation voltage: VCE (sat) = 0.5 V (max)IC = 1A High-speed switching: tstg = 0.4 s (typ) www.DataSheet4U.comAbsolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating UnitCollector-ba
2sc6076.pdf
2SC6076 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC6076 Power Amplifier Applications Unit: mmPower Switching Applications Low collector saturation voltage: VCE (sat) = 0.5 V (max) ( IC = 1A) High-speed switching: tstg = 0.4 s (typ.) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating UnitCollector-base voltage VCBO 160 VCollector-emitt
2sc6079.pdf
2SC6079 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6079 Power Amplifier Applications Unit: mmPower Switching Applications Low collector saturation voltage: VCE (sat) = 0.5 V (max)IC = 1A High-speed switching: tstg = 0.4 s (typ) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating UnitCollector-base voltage VCBO 160 VCollector-emitter voltage VC
2sc6078.pdf
2SC6078 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC6078 Power Amplifier Applications Unit: mm Power Switching Applications Low collector saturation voltage: VCE (sat) = 0.5 V (max)IC = 1A High-speed switching: tstg = 0.4 s (typ) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating UnitCollector-base voltage VCBO 160 V
2sc6076.pdf
isc Silicon NPN Power Transistor 2SC6076DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 160V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V =0.5V(Max) @I = 1ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower Amplifier ApplicationsPower Switching ApplicationsABSOLUTE MAXIMUM RATINGS(T =25
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , BC557 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
