2N5805 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N5805
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 110 W
Maximum Collector-Base Voltage |Vcb|: 375 V
Maximum Collector-Emitter Voltage |Vce|: 300 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 15 MHz
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package: TO3
2N5805 Transistor Equivalent Substitute - Cross-Reference Search
2N5805 Datasheet (PDF)
2n5804 2n5805.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5804 2N5805 DESCRIPTION With TO-3 package High breakdown APPLICATIONS Switching regulator Inverters Solenoid and relay drivers Motor controls PINNING PIN DESCRIPTION1 Base 2 Emitter3 CollectorFig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=) SYMBOL PARAMETE
2n5804 2n5805.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5804 2N5805 DESCRIPTION With TO-3 package High breakdown voltage APPLICATIONS Switching regulator Inverters Solenoid and relay drivers Motor controls PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute maximum ratings(Ta=)
Datasheet: 2N5786 , 2N579 , 2N5793 , 2N5794 , 2N5795 , 2N5796 , 2N580 , 2N5804 , D880 , 2N581 , 2N5810 , 2N5811 , 2N5812 , 2N5813 , 2N5814 , 2N5815 , 2N5816 .
