All Transistors. TPC6501 Datasheet

 

TPC6501 Datasheet and Replacement


   Type Designator: TPC6501
   SMD Transistor Code: H2A
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.8 W
   Maximum Collector-Base Voltage |Vcb|: 20 V
   Maximum Collector-Emitter Voltage |Vce|: 10 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 2 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 400
   Noise Figure, dB: -
   Package: VS6

 TPC6501 Transistor Equivalent Substitute - Cross-Reference Search

   

TPC6501 Datasheet (PDF)

 ..1. Size:142K  toshiba
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TPC6501

TPC6501 TOSHIBA Transistor Silicon NPN Epitaxial Type TPC6501 High-Speed Switching Applications Unit mm DC-DC Converter Applications Strobe Applications High DC current gain hFE = 400 to 1000 (IC = 0.2 A) Low collector-emitter saturation voltage VCE (sat) = 0.12 V (max) High-speed switching tf = 25 ns (typ.) Absolute Maximum Ratings (Ta = 25 C) Characteris... See More ⇒

 ..2. Size:134K  toshiba
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TPC6501

TPC6501 TOSHIBA Transistor Silicon NPN Epitaxial Type TPC6501 High-Speed Switching Applications Unit mm DC-DC Converter Applications Strobe Applications High DC current gain hFE = 400 to 1000 (IC = 0.2 A) Low collector-emitter saturation voltage VCE (sat) = 0.12 V (max) High-speed switching tf = 25 ns (typ.) Maximum Ratings (Ta = 25 C) Characteristics Symb... See More ⇒

 8.1. Size:157K  toshiba
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TPC6501

TPC6504 TOSHIBA Transistor Silicon NPN Epitaxial Type TPC6504 High-Speed Switching Applications Unit mm DC-DC Converter Applications Strobe Applications High DC current gain hFE = 400 to 1000 (IC = 0.1 A) Low collector-emitter saturation voltage VCE (sat) = 0.17 V (max) High-speed switching tf = 85 ns (typ.) Absolute Maximum Ratings (Ta = 25 C) Characte... See More ⇒

 8.2. Size:190K  toshiba
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TPC6501

TPC6503 TOSHIBA Transistor Silicon NPN Epitaxial Type TPC6503 High-Speed Switching Applications Unit mm DC-DC Converter Applications Strobe Applications High DC current gain hFE = 400 to 1000 (IC = 0.15 A) Low collector-emitter saturation voltage VCE (sat) = 0.12 V (max) High-speed switching tf = 45 ns (typ.) Absolute Maximum Ratings (Ta = 25 C) Characteri... See More ⇒

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Datasheet: 2SC6124 , 2SC6125 , 2SC6126 , 2SC6127 , 2SC6136 , 2SC6139 , 2SC6140 , 2SC6142 , D880 , TPC6502 , TPC6503 , TPC6504 , TPC6601 , TPC6602 , TPC6603 , TPC6604 , TPC6701 .

Keywords - TPC6501 transistor datasheet

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