All Transistors. TPC6501 Datasheet

 

TPC6501 Datasheet and Replacement


   Type Designator: TPC6501
   SMD Transistor Code: H2A
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.8 W
   Maximum Collector-Base Voltage |Vcb|: 20 V
   Maximum Collector-Emitter Voltage |Vce|: 10 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 2 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 400
   Noise Figure, dB: -
   Package: VS6
 

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TPC6501 Datasheet (PDF)

 ..1. Size:142K  toshiba
 tpc6501 .pdf pdf_icon

TPC6501

TPC6501 TOSHIBA Transistor Silicon NPN Epitaxial Type TPC6501 High-Speed Switching Applications Unit: mmDC-DC Converter Applications Strobe Applications High DC current gain: hFE = 400 to 1000 (IC = 0.2 A) Low collector-emitter saturation voltage: VCE (sat) = 0.12 V (max) High-speed switching: tf = 25 ns (typ.) Absolute Maximum Ratings (Ta = 25C) Characteris

 ..2. Size:134K  toshiba
 tpc6501.pdf pdf_icon

TPC6501

TPC6501 TOSHIBA Transistor Silicon NPN Epitaxial Type TPC6501 High-Speed Switching Applications Unit: mmDC-DC Converter Applications Strobe Applications High DC current gain: hFE = 400 to 1000 (IC = 0.2 A) Low collector-emitter saturation voltage: VCE (sat) = 0.12 V (max) High-speed switching: tf = 25 ns (typ.) Maximum Ratings (Ta = 25C) Characteristics Symb

 8.1. Size:157K  toshiba
 tpc6504.pdf pdf_icon

TPC6501

TPC6504 TOSHIBA Transistor Silicon NPN Epitaxial Type TPC6504 High-Speed Switching Applications Unit: mmDC-DC Converter Applications Strobe Applications High DC current gain : hFE = 400 to 1000 (IC = 0.1 A) Low collector-emitter saturation voltage : VCE (sat) = 0.17 V (max) High-speed switching : tf = 85 ns (typ.) Absolute Maximum Ratings (Ta = 25C) Characte

 8.2. Size:190K  toshiba
 tpc6503.pdf pdf_icon

TPC6501

TPC6503 TOSHIBA Transistor Silicon NPN Epitaxial Type TPC6503 High-Speed Switching Applications Unit: mmDC-DC Converter Applications Strobe Applications High DC current gain: hFE = 400 to 1000 (IC = 0.15 A) Low collector-emitter saturation voltage: VCE (sat) = 0.12 V (max) High-speed switching: tf = 45 ns (typ.) Absolute Maximum Ratings (Ta = 25C) Characteri

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Datasheet: 2SC6124 , 2SC6125 , 2SC6126 , 2SC6127 , 2SC6136 , 2SC6139 , 2SC6140 , 2SC6142 , 2SD669A , TPC6502 , TPC6503 , TPC6504 , TPC6601 , TPC6602 , TPC6603 , TPC6604 , TPC6701 .

History: MPS4141

Keywords - TPC6501 transistor datasheet

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