2N581 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N581
Material of Transistor: Ge
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 18 V
Maximum Collector-Emitter Voltage |Vce|: 15 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 85 °C
Transition Frequency (ft): 3 MHz
Collector Capacitance (Cc): 20 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO5
2N581 Transistor Equivalent Substitute - Cross-Reference Search
2N581 Datasheet (PDF)
0.1. Size:83K central
2n5814 2n5815 2n5816 2n5817 2n5818 2n5819.pdf
2n5814 2n5815 2n5816 2n5817 2n5818 2n5819.pdf
TMCentralSemiconductor Corp.145 Adams AvenueHauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824www.centralsemi.com
Datasheet: 2N579 , 2N5793 , 2N5794 , 2N5795 , 2N5796 , 2N580 , 2N5804 , 2N5805 , MPSA42 , 2N5810 , 2N5811 , 2N5812 , 2N5813 , 2N5814 , 2N5815 , 2N5816 , 2N5817 .