2N581 Datasheet. Specs and Replacement
Type Designator: 2N581 📄📄
Material of Transistor: Ge
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 18 V
Maximum Collector-Emitter Voltage |Vce|: 15 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 85 °C
Electrical Characteristics
Transition Frequency (ft): 3 MHz
Collector Capacitance (Cc): 20 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Package: TO5
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2N581 datasheet
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TM Central Semiconductor Corp. 145 Adams Avenue Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824 www.centralsemi.com ... See More ⇒
Detailed specifications: 2N579, 2N5793, 2N5794, 2N5795, 2N5796, 2N580, 2N5804, 2N5805, 2N2907, 2N5810, 2N5811, 2N5812, 2N5813, 2N5814, 2N5815, 2N5816, 2N5817
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