2N5812 Datasheet. Specs and Replacement

Type Designator: 2N5812  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.5 W

Maximum Collector-Base Voltage |Vcb|: 35 V

Maximum Collector-Emitter Voltage |Vce|: 25 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.75 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 135 MHz

Collector Capacitance (Cc): 15 pF

Forward Current Transfer Ratio (hFE), MIN: 60

Noise Figure, dB: -

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2N5812 datasheet

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TM Central Semiconductor Corp. 145 Adams Avenue Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824 www.centralsemi.com ... See More ⇒

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Detailed specifications: 2N5795, 2N5796, 2N580, 2N5804, 2N5805, 2N581, 2N5810, 2N5811, 431, 2N5813, 2N5814, 2N5815, 2N5816, 2N5817, 2N5818, 2N5819, 2N582

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