2N5817 Datasheet. Specs and Replacement

Type Designator: 2N5817  📄📄 

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.5 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 40 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.75 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 120 MHz

Collector Capacitance (Cc): 15 pF

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

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2N5817 datasheet

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2N5817

TM Central Semiconductor Corp. 145 Adams Avenue Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824 www.centralsemi.com ... See More ⇒

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Detailed specifications: 2N581, 2N5810, 2N5811, 2N5812, 2N5813, 2N5814, 2N5815, 2N5816, BD136, 2N5818, 2N5819, 2N582, 2N5820, 2N5821, 2N5822, 2N5823, 2N5824

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