MT4S03AU Datasheet PDF and Replacements, Transistor Equivalent Finder, Cross Reference

MT4S03AU Datasheet. Specs and Replacement

Type Designator: MT4S03AU 📄📄

SMD Transistor Code: MR

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.1 W

Maximum Collector-Base Voltage |Vcb|: 10 V

Maximum Collector-Emitter Voltage |Vce|: 5 V

Maximum Emitter-Base Voltage |Veb|: 2 V

Maximum Collector Current |Ic max|: 0.04 A

Max. Operating Junction Temperature (Tj): 125 °C

Electrical Characteristics

Transition Frequency (ft): 10000 MHz

Forward Current Transfer Ratio (hFE), MIN: 80

Noise Figure, dB: -

Package: USQ

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MT4S03AU Substitution

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MT4S03AU datasheet

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MT4S03A TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT4S03A VHF UHF Band Low Noise Amplifier Applications Unit mm Low noise figure NF = 1.4dB (f = 2 GHz) High gain Gain = 9dB (f = 2 GHz) Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 10 V Collector-emitter voltage VCEO 5 V Emitter-base voltage VEBO 2 V ... See More ⇒

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MT4S03BU TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT4S03BU Unit mm VHF UHF Band Low Noise Amplifier Applications Low Noise Figure NF = 1.6dB (Typ.) (@f = 2GHz) High Gain S21e 2 = 9dB (Typ.) (@f = 2 GHz) Absolute Maximum Ratings (Ta = 25 C) 1.Emitter1(E1) 2.Collector(C) Characteristic Symbol Unit Rating 3.Emitter2(E2) 4.Base(B) Collector-base ... See More ⇒

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