All Transistors. MT4S24U Datasheet

 

MT4S24U Datasheet and Replacement


   Type Designator: MT4S24U
   SMD Transistor Code: R8
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.175 W
   Maximum Collector-Base Voltage |Vcb|: 10 V
   Maximum Collector-Emitter Voltage |Vce|: 5 V
   Maximum Emitter-Base Voltage |Veb|: 2 V
   Maximum Collector Current |Ic max|: 0.05 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 14500 MHz
   Forward Current Transfer Ratio (hFE), MIN: 70
   Noise Figure, dB: -
   Package: USQ
 
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MT4S24U Datasheet (PDF)

 ..1. Size:167K  toshiba
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MT4S24U

MT4S24U TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT4S24U Unit: mmVHF~UHF Band Low Noise Amplifier Applications Low Noise Figure: NF = 1.55dB(Typ.) (@f = 2GHz) High Gain: |S21e|2 = 11.5dB(Typ.) (@f = 2 GHz) Absolute Maximum Ratings (Ta = 25C) 1.Emitter1(E1) 2.Collector(C) Characteristic Symbol Unit Rating 3.Emitter2(E2) 4.Base(B) USQ Collector

 9.1. Size:184K  toshiba
mt4s23u.pdf pdf_icon

MT4S24U

MT4S23U TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT4S23U Unit: mmVHF~UHF Band Low Noise Amplifier Applications Low Noise Figure: NF = 1.4dB (Typ.) (@f = 2 GHz) High Gain: |S21e|2 = 12dB (Typ.) (@f = 2 GHz) Compatible with 2SC53191.Emitter1(E1) Absolute Maximum Ratings (Ta = 25C) 2.Collector(C) 3.Emitter2(E2) 4.Base(B) Characteristic Symbol Ra

Datasheet: MT3S35FS , MT3S37FS , MT3S41FS , MT4S03A , MT4S03AU , MT4S03BU , MT4S06U , MT4S23U , 2SC945 , 2SB1015A , 2SB1016A , 2SB1018A , 2SB1020A , 2SB1594 , 2SB1617 , 2SB1640 , 2SB1641 .

Keywords - MT4S24U transistor datasheet

 MT4S24U cross reference
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