All Transistors. MT4S24U Datasheet

 

MT4S24U Datasheet and Replacement


   Type Designator: MT4S24U
   SMD Transistor Code: R8
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.175 W
   Maximum Collector-Base Voltage |Vcb|: 10 V
   Maximum Collector-Emitter Voltage |Vce|: 5 V
   Maximum Emitter-Base Voltage |Veb|: 2 V
   Maximum Collector Current |Ic max|: 0.05 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 14500 MHz
   Forward Current Transfer Ratio (hFE), MIN: 70
   Noise Figure, dB: -
   Package: USQ
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MT4S24U Datasheet (PDF)

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MT4S24U

MT4S24U TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT4S24U Unit: mmVHF~UHF Band Low Noise Amplifier Applications Low Noise Figure: NF = 1.55dB(Typ.) (@f = 2GHz) High Gain: |S21e|2 = 11.5dB(Typ.) (@f = 2 GHz) Absolute Maximum Ratings (Ta = 25C) 1.Emitter1(E1) 2.Collector(C) Characteristic Symbol Unit Rating 3.Emitter2(E2) 4.Base(B) USQ Collector

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MT4S24U

MT4S23U TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT4S23U Unit: mmVHF~UHF Band Low Noise Amplifier Applications Low Noise Figure: NF = 1.4dB (Typ.) (@f = 2 GHz) High Gain: |S21e|2 = 12dB (Typ.) (@f = 2 GHz) Compatible with 2SC53191.Emitter1(E1) Absolute Maximum Ratings (Ta = 25C) 2.Collector(C) 3.Emitter2(E2) 4.Base(B) Characteristic Symbol Ra

Datasheet: HA9079 , HA9500 , HA9501 , HA9502 , HA9531 , HA9531A , HA9532 , HA9532A , D667 , HCT2907A , HCT2907M , HDA412 , HDA420 , HDA496 , HEP637 , HEPG0001 , HEPG0002 .

History: KT8107D2 | TN2716 | JE9100G | UN9217R | 2N1056 | 2SC999A | ECG2306

Keywords - MT4S24U transistor datasheet

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