MT4S24U Datasheet, Equivalent, Cross Reference Search
Type Designator: MT4S24U
SMD Transistor Code: R8
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.175 W
Maximum Collector-Base Voltage |Vcb|: 10 V
Maximum Collector-Emitter Voltage |Vce|: 5 V
Maximum Emitter-Base Voltage |Veb|: 2 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 14500 MHz
Forward Current Transfer Ratio (hFE), MIN: 70
Noise Figure, dB: -
Package: USQ
MT4S24U Transistor Equivalent Substitute - Cross-Reference Search
MT4S24U Datasheet (PDF)
mt4s24u.pdf
MT4S24U TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT4S24U Unit: mmVHF~UHF Band Low Noise Amplifier Applications Low Noise Figure: NF = 1.55dB(Typ.) (@f = 2GHz) High Gain: |S21e|2 = 11.5dB(Typ.) (@f = 2 GHz) Absolute Maximum Ratings (Ta = 25C) 1.Emitter1(E1) 2.Collector(C) Characteristic Symbol Unit Rating 3.Emitter2(E2) 4.Base(B) USQ Collector
mt4s23u.pdf
MT4S23U TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT4S23U Unit: mmVHF~UHF Band Low Noise Amplifier Applications Low Noise Figure: NF = 1.4dB (Typ.) (@f = 2 GHz) High Gain: |S21e|2 = 12dB (Typ.) (@f = 2 GHz) Compatible with 2SC53191.Emitter1(E1) Absolute Maximum Ratings (Ta = 25C) 2.Collector(C) 3.Emitter2(E2) 4.Base(B) Characteristic Symbol Ra
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
