2SB1016A Datasheet. Specs and Replacement

Type Designator: 2SB1016A  📄📄 

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 30 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 100 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 5 MHz

Collector Capacitance (Cc): 270 pF

Forward Current Transfer Ratio (hFE), MIN: 70

Noise Figure, dB: -

Package: TO220NIS

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2SB1016A datasheet

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JMnic Product Specification Silicon PNP Power Transistors 2SB1016 DESCRIPTION With TO-220Fa package High breakdown voltage Low collector saturation voltage Complement to type 2SD1407 APPLICATIONS Power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Co... See More ⇒

 7.3. Size:217K  inchange semiconductor

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2SB1016A

isc Silicon PNP Power Transistor 2SB1016 DESCRIPTION Low Collector Saturation Voltage- V = -2.0 V(Max)@I = -4A CE(sat) C Good Linearity of h FE Complement to Type 2SD1407 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL P... See More ⇒

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Detailed specifications: MT3S41FS, MT4S03A, MT4S03AU, MT4S03BU, MT4S06U, MT4S23U, MT4S24U, 2SB1015A, 2SD2499, 2SB1018A, 2SB1020A, 2SB1594, 2SB1617, 2SB1640, 2SB1641, 2SB1642, 2SB1667SM

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