All Transistors. 2SB1018A Datasheet

 

2SB1018A Datasheet and Replacement


   Type Designator: 2SB1018A
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 30 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 7 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 10 MHz
   Collector Capacitance (Cc): 250 pF
   Forward Current Transfer Ratio (hFE), MIN: 70
   Noise Figure, dB: -
   Package: DP
 

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2SB1018A Datasheet (PDF)

 ..1. Size:233K  toshiba
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2SB1018A

 ..2. Size:213K  inchange semiconductor
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2SB1018A

isc Silicon PNP Power Transistor 2SB1018ADESCRIPTIONLow Collector Saturation Voltage-: V = -0.5V(Max)@I = -4ACE(sat) CHigh Current Capability- I = -7ACComplement to Type 2SD1411AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh current switching applications.Power amplifier applications.ABSOLUTE MAXIMUM RATING

 7.1. Size:199K  toshiba
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2SB1018A

 7.2. Size:208K  jmnic
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2SB1018A

JMnic Product Specification Silicon PNP Power Transistors 2SB1018 DESCRIPTION With TO-220F package High collector current Low collector saturation voltage Complement to type 2SD1411 APPLICATIONS Power amplifier applications High current switching applications PINNING PIN DESCRIPTION1 Emitter 2 CollectorFig.1 simplified outline (TO-220F) and symbol3 Base

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Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N5401 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .

History: DTL1652 | HE8550 | MJ10025 | 2SA1386AY | 2SCR293PFRA

Keywords - 2SB1018A transistor datasheet

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