2SB1018A Specs and Replacement
Type Designator: 2SB1018A
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 7 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 10 MHz
Collector Capacitance (Cc): 250 pF
Forward Current Transfer Ratio (hFE), MIN: 70
Package: DP
2SB1018A Substitution
- BJT ⓘ Cross-Reference Search
2SB1018A datasheet
isc Silicon PNP Power Transistor 2SB1018A DESCRIPTION Low Collector Saturation Voltage- V = -0.5V(Max)@I = -4A CE(sat) C High Current Capability- I = -7A C Complement to Type 2SD1411A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High current switching applications. Power amplifier applications. ABSOLUTE MAXIMUM RATING... See More ⇒
JMnic Product Specification Silicon PNP Power Transistors 2SB1018 DESCRIPTION With TO-220F package High collector current Low collector saturation voltage Complement to type 2SD1411 APPLICATIONS Power amplifier applications High current switching applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Base... See More ⇒
Detailed specifications: MT4S03A, MT4S03AU, MT4S03BU, MT4S06U, MT4S23U, MT4S24U, 2SB1015A, 2SB1016A, 2SC2625, 2SB1020A, 2SB1594, 2SB1617, 2SB1640, 2SB1641, 2SB1642, 2SB1667SM, 2SB1682
Keywords - 2SB1018A pdf specs
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