2SB1617 Datasheet. Specs and Replacement

Type Designator: 2SB1617  📄📄 

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 1.3 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 100 V

Maximum Emitter-Base Voltage |Veb|: 8 V

Maximum Collector Current |Ic max|: 2 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 50 MHz

Collector Capacitance (Cc): 27 pF

Forward Current Transfer Ratio (hFE), MIN: 2000

Noise Figure, dB: -

Package: TPS

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2SB1617 datasheet

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Transistor 2SB1612 Silicon PNP epitaxial planer type For low-frequency amplification Unit mm Complementary to 2SD2474 1.5 0.1 4.5 0.1 Features 1.6 0.2 Low collector to emitter saturation voltage VCE(sat). Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the maga- 45 zine packing. 0.4 0.08 0.4 0.04 0.5... See More ⇒

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2SB1617

Transistor 2SB1612 Silicon PNP epitaxial planer type For low-frequency amplification Unit mm Complementary to 2SD2474 1.5 0.1 4.5 0.1 Features 1.6 0.2 Low collector to emitter saturation voltage VCE(sat). Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the maga- 45 zine packing. 0.4 0.08 0.4 0.04 0.5... See More ⇒

Detailed specifications: MT4S06U, MT4S23U, MT4S24U, 2SB1015A, 2SB1016A, 2SB1018A, 2SB1020A, 2SB1594, 9014, 2SB1640, 2SB1641, 2SB1642, 2SB1667SM, 2SB1682, 2SD1407A, 2SD1409A, 2SD1410A

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