HIT667 Datasheet. Specs and Replacement

Type Designator: HIT667  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.9 W

Maximum Collector-Base Voltage |Vcb|: 120 V

Maximum Collector-Emitter Voltage |Vce|: 100 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 140

Noise Figure, dB: -

Package: TO92MOD

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HIT667 datasheet

 0.1. Size:64K  renesas

 r07ds0450ej hit667-1.pdf pdf_icon

HIT667

Preliminary Datasheet R07DS0450EJ0400 HIT667 (Previous REJ03G1505-0300) Rev.4.00 Silicon NPN Epitaxial Jun 14, 2011 Features Low frequency power amplifier Complementary pair with HIT647 Outline RENESAS Package code PRSS0003DC-A (Package name TO-92 Mod) 1. Emitter 2. Collector 3. Base 3 2 1 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit ... See More ⇒

Detailed specifications: 2SA673AKD, 2SC1213AKC, 2SC1213AKD, 2SC2618C, 2SD2655, 2SC4702, 2SB1691, HIT468, 2SC5200, HIT562, HIT647, 15C01C, 2SA1179N, 2SA1768, 2SA2040, 2SA2127, 2SA2186

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