All Transistors. HIT667 Datasheet

 

HIT667 Datasheet, Equivalent, Cross Reference Search


   Type Designator: HIT667
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.9 W
   Maximum Collector-Base Voltage |Vcb|: 120 V
   Maximum Collector-Emitter Voltage |Vce|: 100 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 140
   Noise Figure, dB: -
   Package: TO92MOD

 HIT667 Transistor Equivalent Substitute - Cross-Reference Search

   

HIT667 Datasheet (PDF)

 0.1. Size:64K  renesas
r07ds0450ej hit667-1.pdf pdf_icon

HIT667
HIT667

Preliminary Datasheet R07DS0450EJ0400HIT667 (Previous: REJ03G1505-0300)Rev.4.00Silicon NPN Epitaxial Jun 14, 2011Features Low frequency power amplifier Complementary pair with HIT647 Outline RENESAS Package code: PRSS0003DC-A(Package name: TO-92 Mod)1. Emitter2. Collector3. Base321Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit

Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , BC557 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

 

 
Back to Top