All Transistors. HIT667 Datasheet

 

HIT667 Datasheet and Replacement


   Type Designator: HIT667
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.9 W
   Maximum Collector-Base Voltage |Vcb|: 120 V
   Maximum Collector-Emitter Voltage |Vce|: 100 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 140
   Noise Figure, dB: -
   Package: TO92MOD
 

 HIT667 Substitution

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HIT667 Datasheet (PDF)

 0.1. Size:64K  renesas
 r07ds0450ej hit667-1.pdf pdf_icon

HIT667

Preliminary Datasheet R07DS0450EJ0400HIT667 (Previous: REJ03G1505-0300)Rev.4.00Silicon NPN Epitaxial Jun 14, 2011Features Low frequency power amplifier Complementary pair with HIT647 Outline RENESAS Package code: PRSS0003DC-A(Package name: TO-92 Mod)1. Emitter2. Collector3. Base321Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit

Datasheet: 2SA673AKD , 2SC1213AKC , 2SC1213AKD , 2SC2618C , 2SD2655 , 2SC4702 , 2SB1691 , HIT468 , BD139 , HIT562 , HIT647 , 15C01C , 2SA1179N , 2SA1768 , 2SA2040 , 2SA2127 , 2SA2186 .

History: BTD2098LN3 | 2SC3076 | 2SC3047 | 2SB1182

Keywords - HIT667 transistor datasheet

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