HIT667 Datasheet, Equivalent, Cross Reference Search
Type Designator: HIT667
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.9 W
Maximum Collector-Base Voltage |Vcb|: 120 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 140
Noise Figure, dB: -
Package: TO92MOD
HIT667 Transistor Equivalent Substitute - Cross-Reference Search
HIT667 Datasheet (PDF)
r07ds0450ej hit667-1.pdf
Preliminary Datasheet R07DS0450EJ0400HIT667 (Previous: REJ03G1505-0300)Rev.4.00Silicon NPN Epitaxial Jun 14, 2011Features Low frequency power amplifier Complementary pair with HIT647 Outline RENESAS Package code: PRSS0003DC-A(Package name: TO-92 Mod)1. Emitter2. Collector3. Base321Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit
Datasheet: 2SA673AKD , 2SC1213AKC , 2SC1213AKD , 2SC2618C , 2SD2655 , 2SC4702 , 2SB1691 , HIT468 , C945 , HIT562 , HIT647 , 15C01C , 2SA1179N , 2SA1768 , 2SA2040 , 2SA2127 , 2SA2186 .
LIST
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BJT: 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050 | HSA1037AKS