2N5822 Datasheet, Equivalent, Cross Reference Search

   Type Designator: 2N5822
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.5 W
   Maximum Collector-Base Voltage |Vcb|: 70 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.75 A
   Max. Operating Junction Temperature (Tj): 135 °C
   Transition Frequency (ft): 120 MHz
   Collector Capacitance (Cc): 15 pF
   Forward Current Transfer Ratio (hFE), MIN: 25
   Noise Figure, dB: -

2N5822 Transistor Equivalent Substitute - Cross-Reference Search

2N5822 Datasheet (PDF)

..1. Size:47K central
2n5820 2n5821 2n5822 2n5823.pdf

TM2N5820 2N5822 NPNCentral2N5821 2N5823 PNPSemiconductor Corp.COMPLEMENTARYSILICON TRANSISTORSDESCRIPTION:The CENTRAL SEMICONDUCTOR 2N5820 seriestypes are epoxy molded complementary siliconsmall signal transistors manufactured by theepitaxial planar process designed for generalpurpose amplifier applications where a highcollector current rating is required.MARKING COD

9.1. Size:218K rca
2n582.pdf