ECH8102 Specs and Replacement
Type Designator: ECH8102
SMD Transistor Code: GB
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 1.6 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 12 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 140 MHz
Collector Capacitance (Cc): 120 pF
Forward Current Transfer Ratio (hFE), MIN: 200
Package: ECH8
ECH8102 Substitution
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ECH8102 datasheet
Ordering number ENA1420A ECH8102 Bipolar Transistor http //onsemi.com ( ) 30V, 12A, Low VCE sat , PNP Single ECH8 Applications High-power IGBT / MOSFET gate drivers, DC / DC converters, lamp drivers, motor drivers Features Adoption of FBET, MBIT process High current capacitance Low collector-to-emitter saturation voltage High speed switching High... See More ⇒
Detailed specifications: 2SC6098 , 2SC6099 , CPH3101 , CPH3107 , CPH3114 , CPH3144 , CPH3212 , CPH6102 , TIP42C , F5H2101 , F5H2201 , MCH3105 , MCH3106 , MCH3109 , MCH3144 , MCH3145 , MCH3205 .
Keywords - ECH8102 pdf specs
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