All Transistors. ECH8102 Datasheet

 

ECH8102 Datasheet and Replacement


   Type Designator: ECH8102
   SMD Transistor Code: GB
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 1.6 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 12 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 140 MHz
   Collector Capacitance (Cc): 120 pF
   Forward Current Transfer Ratio (hFE), MIN: 200
   Noise Figure, dB: -
   Package: ECH8
      - BJT Cross-Reference Search

   

ECH8102 Datasheet (PDF)

 ..1. Size:213K  onsemi
 ech8102.pdf pdf_icon

ECH8102

Ordering number : ENA1420AECH8102Bipolar Transistorhttp://onsemi.com ( )30V, 12A, Low VCE sat , PNP Single ECH8Applications High-power IGBT / MOSFET gate drivers, DC / DC converters, lamp drivers, motor driversFeatures Adoption of FBET, MBIT process High current capacitance Low collector-to-emitter saturation voltage High speed switching High

Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2SD1047 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

History: 2N4955-78 | D60T6050 | 2SC4038 | 2SC482Y | KSC5025R | 2SB67 | RN4989

Keywords - ECH8102 transistor datasheet

 ECH8102 cross reference
 ECH8102 equivalent finder
 ECH8102 lookup
 ECH8102 substitution
 ECH8102 replacement

 

 
Back to Top

 


 
.