ECH8102 Datasheet, Equivalent, Cross Reference Search
Type Designator: ECH8102
SMD Transistor Code: GB
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 1.6 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 12 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 140 MHz
Collector Capacitance (Cc): 120 pF
Forward Current Transfer Ratio (hFE), MIN: 200
Noise Figure, dB: -
Package: ECH8
ECH8102 Transistor Equivalent Substitute - Cross-Reference Search
ECH8102 Datasheet (PDF)
..1. Size:213K onsemi
ech8102.pdf
ech8102.pdf
Ordering number : ENA1420AECH8102Bipolar Transistorhttp://onsemi.com ( )30V, 12A, Low VCE sat , PNP Single ECH8Applications High-power IGBT / MOSFET gate drivers, DC / DC converters, lamp drivers, motor driversFeatures Adoption of FBET, MBIT process High current capacitance Low collector-to-emitter saturation voltage High speed switching High
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: EFT331 | ED1702 | 2SA2214
