All Transistors. ECH8102 Datasheet

 

ECH8102 Datasheet and Replacement


   Type Designator: ECH8102
   SMD Transistor Code: GB
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 1.6 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 12 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 140 MHz
   Collector Capacitance (Cc): 120 pF
   Forward Current Transfer Ratio (hFE), MIN: 200
   Noise Figure, dB: -
   Package: ECH8
 

 ECH8102 Substitution

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ECH8102 Datasheet (PDF)

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ECH8102

Ordering number : ENA1420AECH8102Bipolar Transistorhttp://onsemi.com ( )30V, 12A, Low VCE sat , PNP Single ECH8Applications High-power IGBT / MOSFET gate drivers, DC / DC converters, lamp drivers, motor driversFeatures Adoption of FBET, MBIT process High current capacitance Low collector-to-emitter saturation voltage High speed switching High

Datasheet: 2SC6098 , 2SC6099 , CPH3101 , CPH3107 , CPH3114 , CPH3144 , CPH3212 , CPH6102 , TIP42C , F5H2101 , F5H2201 , MCH3105 , MCH3106 , MCH3109 , MCH3144 , MCH3145 , MCH3205 .

History: LMUN5216DW1T1G

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