All Transistors. F5H2101 Datasheet

 

F5H2101 Datasheet and Replacement


   Type Designator: F5H2101
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 30 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 15 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 140 MHz
   Collector Capacitance (Cc): 215 pF
   Forward Current Transfer Ratio (hFE), MIN: 150
   Noise Figure, dB: -
   Package: TO220FI5H
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F5H2101 Datasheet (PDF)

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F5H2101

Ordering number : ENA0725 F5H2101SANYO SemiconductorsDATA SHEETPNP Epitaxial Planar Silicon TransistorF5H2101High-Current Switching ApplicationsApplications Relay drivers, lamp drivers, motor drivers.Features Adoption of MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. The F5H2101 consists o

Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N5401 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .

History: 2SD1007HR | BDY12B | ED1602D | BU922T | KT208I | DRC9143X | SFE245

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