F5H2101 Datasheet, Equivalent, Cross Reference Search
Type Designator: F5H2101
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 140 MHz
Collector Capacitance (Cc): 215 pF
Forward Current Transfer Ratio (hFE), MIN: 150
Noise Figure, dB: -
Package: TO220FI5H
F5H2101 Transistor Equivalent Substitute - Cross-Reference Search
F5H2101 Datasheet (PDF)
..1. Size:59K sanyo
f5h2101.pdf
f5h2101.pdf
Ordering number : ENA0725 F5H2101SANYO SemiconductorsDATA SHEETPNP Epitaxial Planar Silicon TransistorF5H2101High-Current Switching ApplicationsApplications Relay drivers, lamp drivers, motor drivers.Features Adoption of MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. The F5H2101 consists o
Datasheet: HA9079 , HA9500 , HA9501 , HA9502 , HA9531 , HA9531A , HA9532 , HA9532A , 2222A , HCT2907A , HCT2907M , HDA412 , HDA420 , HDA496 , HEP637 , HEPG0001 , HEPG0002 .
History: 3DA3866
