All Transistors. 2N5824 Datasheet

 

2N5824 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2N5824
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.36 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 40 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 125 °C
   Transition Frequency (ft): 90 MHz
   Collector Capacitance (Cc): 4 pF
   Forward Current Transfer Ratio (hFE), MIN: 60
   Noise Figure, dB: -

 2N5824 Transistor Equivalent Substitute - Cross-Reference Search

   

2N5824 Datasheet (PDF)

 9.1. Size:218K  rca
 2n582.pdf

2N5824

 9.2. Size:47K  central
 2n5820 2n5821 2n5822 2n5823.pdf

2N5824 2N5824

TM2N5820 2N5822 NPNCentral2N5821 2N5823 PNPSemiconductor Corp.COMPLEMENTARYSILICON TRANSISTORSDESCRIPTION:The CENTRAL SEMICONDUCTOR 2N5820 seriestypes are epoxy molded complementary siliconsmall signal transistors manufactured by theepitaxial planar process designed for generalpurpose amplifier applications where a highcollector current rating is required.MARKING COD

 9.3. Size:138K  microelectronics
 2n5820-23.pdf

2N5824 2N5824

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: KT509A | 2SA620 | 2SD2651 | 2SA1303O | 2N6735 | KTA1695 | 2SB928A

 

 
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