FH105A Datasheet, Equivalent, Cross Reference Search
Type Designator: FH105A
SMD Transistor Code: 105
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 10 V
Maximum Emitter-Base Voltage |Veb|: 1.5 V
Maximum Collector Current |Ic max|: 0.03 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 8000 MHz
Collector Capacitance (Cc): 0.45 pF
Forward Current Transfer Ratio (hFE), MIN: 90
Noise Figure, dB: -
Package: MCP6
FH105A Transistor Equivalent Substitute - Cross-Reference Search
FH105A Datasheet (PDF)
fh105a.pdf
Ordering number : ENA1126 FH105ASANYO SemiconductorsDATA SHEETNPN Epitaxial Planar Silicon Composite TransistorHigh-Frequency Low-Noise Amplifier,FH105ADifferential Amplifier ApplicationsFeatures Composite type with 2 transistors contained in the MCP package currently in use, improving the mounting efficiencygreatly. The FH105A is formed with two chips, being equivalen
fh105.pdf
Ordering number:ENN6219NPN Epitaxial Planar Silicon Composite TransistorFH105High-Frequency Low-Noise Amplifier,Differential Amplifier ApplicationsFeatures Package Dimensions Composite type with 2 transistors contained in theunit:mmMCP package currently in use, improving the2160mounting efficiency greatly.[FH105] The FH105 is formed with two chips, being equiva-l
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
