FH105A Datasheet. Specs and Replacement
Type Designator: FH105A 📄📄
SMD Transistor Code: 105
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 10 V
Maximum Emitter-Base Voltage |Veb|: 1.5 V
Maximum Collector Current |Ic max|: 0.03 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 8000 MHz
Collector Capacitance (Cc): 0.45 pF
Forward Current Transfer Ratio (hFE), MIN: 90
Package: MCP6
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FH105A datasheet
Ordering number ENA1126 FH105A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Composite Transistor High-Frequency Low-Noise Amplifier, FH105A Differential Amplifier Applications Features Composite type with 2 transistors contained in the MCP package currently in use, improving the mounting efficiency greatly. The FH105A is formed with two chips, being equivalen... See More ⇒
Ordering number ENN6219 NPN Epitaxial Planar Silicon Composite Transistor FH105 High-Frequency Low-Noise Amplifier, Differential Amplifier Applications Features Package Dimensions Composite type with 2 transistors contained in the unit mm MCP package currently in use, improving the 2160 mounting efficiency greatly. [FH105] The FH105 is formed with two chips, being equiva- l... See More ⇒
Detailed specifications: 2SC4853A, 2SC5277A, 2SC5374A, 2SC5414A, 2SC5490A, 2SC5536A, 2SC5646A, EC3H07BA, 9014, MCH4013, CPH5516, CPH5518, CPH5520, CPH5541, ECH8502, MCH6536, CPH6538
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