2N1176B Specs and Replacement
Type Designator: 2N1176B
Material of Transistor: Ge
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 1 V
Maximum Collector Current |Ic max|: 0.3 A
Max. Operating Junction Temperature (Tj): 100 °C
Electrical Characteristics
Transition Frequency (ft): 0.3 MHz
Collector Capacitance (Cc): 90 pF
Forward Current Transfer Ratio (hFE), MIN: 200
Package: TO5
2N1176B Substitution
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2N1176B datasheet
Detailed specifications: 2N1172, 2N1173, 2N1174, 2N1175, 2N1175A, 2N1175B, 2N1176, 2N1176A, A1015, 2N1177, 2N1178, 2N1179, 2N118, 2N1180, 2N1182, 2N1183, 2N1183A
Keywords - 2N1176B pdf specs
2N1176B cross reference
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