All Transistors. 2N583 Datasheet

 

2N583 Datasheet and Replacement


   Type Designator: 2N583
   Material of Transistor: Ge
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.12 W
   Maximum Collector-Base Voltage |Vcb|: 18 V
   Maximum Collector-Emitter Voltage |Vce|: 15 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 85 °C
   Transition Frequency (ft): 3 MHz
   Collector Capacitance (Cc): 20 pF
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: TO1
 

 2N583 Substitution

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2N583 Datasheet (PDF)

 0.1. Size:294K  fairchild semi
2n5830.pdf pdf_icon

2N583

Discrete POWER & SignalTechnologies2N5830C TO-92BENPN General Purpose AmplifierThis device is designed for general purpose highvoltage amplifiers and gas discharge display driving. Sourcedfrom Process 16. See 2N5551 for characteristics.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 100 VV Collector-

 0.2. Size:67K  mcc
2n5832.pdf pdf_icon

2N583

MCCMicro Commercial Components21201 Itasca Street Chatsworth 2N5832CA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Through Hole PackagePlastic-case BipolarNPN TransistorPin Configuration Bottom View C B EElectrical Characteristics @ 25C Unless Otherwise SpecifiedTO-92Symbol Parameter Min Max UnitsA EOFF CHARACTERISTICS V(BR)CEO Collector-Emitt

 0.3. Size:379K  no
2n5839.pdf pdf_icon

2N583

Datasheet: 2N5824 , 2N5825 , 2N5826 , 2N5827 , 2N5827A , 2N5828 , 2N5828A , 2N5829 , 2N2222 , 2N5830 , 2N5831 , 2N5832 , 2N5833 , 2N5834 , 2N5835 , 2N5836 , 2N5837 .

History: GES2894 | LDTC144WET1G | 2SC4428 | K159NT1B | DMA50401 | 2SB1133Q | 2SC5820

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