2N583 Datasheet. Specs and Replacement
Type Designator: 2N583 📄📄
Material of Transistor: Ge
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.12 W
Maximum Collector-Base Voltage |Vcb|: 18 V
Maximum Collector-Emitter Voltage |Vce|: 15 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 85 °C
Electrical Characteristics
Transition Frequency (ft): 3 MHz
Collector Capacitance (Cc): 20 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Package: TO1
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2N583 datasheet
Discrete POWER & Signal Technologies 2N5830 C TO-92 B E NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display driving. Sourced from Process 16. See 2N5551 for characteristics. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 100 V V Collector-... See More ⇒
MCC Micro Commercial Components 21201 Itasca Street Chatsworth 2N5832 CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features Through Hole Package Plastic-case Bipolar NPN Transistor Pin Configuration Bottom View C B E Electrical Characteristics @ 25 C Unless Otherwise Specified TO-92 Symbol Parameter Min Max Units A E OFF CHARACTERISTICS V(BR)CEO Collector-Emitt... See More ⇒
Detailed specifications: 2N5824, 2N5825, 2N5826, 2N5827, 2N5827A, 2N5828, 2N5828A, 2N5829, C1815, 2N5830, 2N5831, 2N5832, 2N5833, 2N5834, 2N5835, 2N5836, 2N5837
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History: 2N3676 | 2N3632 | 2SA1201 | 2SB949A | STA723D | UN911H | 2N3749
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