2N5830 Datasheet. Specs and Replacement
Type Designator: 2N5830 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.625 W
Maximum Collector-Base Voltage |Vcb|: 120 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.6 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 4 pF
Forward Current Transfer Ratio (hFE), MIN: 80
Package: TO92
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2N5830 datasheet
Discrete POWER & Signal Technologies 2N5830 C TO-92 B E NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display driving. Sourced from Process 16. See 2N5551 for characteristics. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 100 V V Collector-... See More ⇒
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Detailed specifications: 2N5825, 2N5826, 2N5827, 2N5827A, 2N5828, 2N5828A, 2N5829, 2N583, 2N5401, 2N5831, 2N5832, 2N5833, 2N5834, 2N5835, 2N5836, 2N5837, 2N5838
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BJT Parameters and How They Relate
History: A1320 | AT270 | NTE244 | 2SC3540O | 2SB1168S | 2N372 | 2SB25
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