All Transistors. 2N5830 Datasheet

 

2N5830 Datasheet and Replacement


   Type Designator: 2N5830
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.625 W
   Maximum Collector-Base Voltage |Vcb|: 120 V
   Maximum Collector-Emitter Voltage |Vce|: 100 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.6 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 4 pF
   Forward Current Transfer Ratio (hFE), MIN: 80
   Noise Figure, dB: -
   Package: TO92
 

 2N5830 Substitution

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2N5830 Datasheet (PDF)

 ..1. Size:294K  fairchild semi
2n5830.pdf pdf_icon

2N5830

Discrete POWER & SignalTechnologies2N5830C TO-92BENPN General Purpose AmplifierThis device is designed for general purpose highvoltage amplifiers and gas discharge display driving. Sourcedfrom Process 16. See 2N5551 for characteristics.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 100 VV Collector-

 ..2. Size:50K  microelectronics
2n5830 2n5831.pdf pdf_icon

2N5830

Datasheet: 2N5825 , 2N5826 , 2N5827 , 2N5827A , 2N5828 , 2N5828A , 2N5829 , 2N583 , TIP41 , 2N5831 , 2N5832 , 2N5833 , 2N5834 , 2N5835 , 2N5836 , 2N5837 , 2N5838 .

History: BDP281 | MP2833 | KSC2328AY | RN2962 | PH2226-110M | FTA1666 | K2111A

Keywords - 2N5830 transistor datasheet

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