2N5830 Datasheet. Specs and Replacement

Type Designator: 2N5830  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.625 W

Maximum Collector-Base Voltage |Vcb|: 120 V

Maximum Collector-Emitter Voltage |Vce|: 100 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.6 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 100 MHz

Collector Capacitance (Cc): 4 pF

Forward Current Transfer Ratio (hFE), MIN: 80

Noise Figure, dB: -

Package: TO92

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2N5830 datasheet

 ..1. Size:294K  fairchild semi

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2N5830

Discrete POWER & Signal Technologies 2N5830 C TO-92 B E NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display driving. Sourced from Process 16. See 2N5551 for characteristics. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 100 V V Collector-... See More ⇒

 ..2. Size:50K  microelectronics

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2N5830

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Detailed specifications: 2N5825, 2N5826, 2N5827, 2N5827A, 2N5828, 2N5828A, 2N5829, 2N583, 2N5401, 2N5831, 2N5832, 2N5833, 2N5834, 2N5835, 2N5836, 2N5837, 2N5838

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