2N5830 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N5830
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.625 W
Maximum Collector-Base Voltage |Vcb|: 120 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.6 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 4 pF
Forward Current Transfer Ratio (hFE), MIN: 80
Noise Figure, dB: -
Package: TO92
2N5830 Transistor Equivalent Substitute - Cross-Reference Search
2N5830 Datasheet (PDF)
2n5830.pdf
Discrete POWER & SignalTechnologies2N5830C TO-92BENPN General Purpose AmplifierThis device is designed for general purpose highvoltage amplifiers and gas discharge display driving. Sourcedfrom Process 16. See 2N5551 for characteristics.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 100 VV Collector-
2n5419 2n5420 2n5550 2n5551 2n5830 2n5831 2n5832 2n5998 2n5999 2n6008 2n6009 2n6076 2n6426 2n6427.pdf
2n5832.pdf
MCCMicro Commercial Components21201 Itasca Street Chatsworth 2N5832CA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Through Hole PackagePlastic-case BipolarNPN TransistorPin Configuration Bottom View C B EElectrical Characteristics @ 25C Unless Otherwise SpecifiedTO-92Symbol Parameter Min Max UnitsA EOFF CHARACTERISTICS V(BR)CEO Collector-Emitt
2n5838.pdf
2N5838Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 275V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 3A 12.70 (0.50) All Semelab hermetically sealed products can be processed in a
2n5832.pdf
2N5832 0.6 A, 160 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES General Purpose Switching Transistor TO-92 G HJMillimeterREF. A D Min. Max.A 4.40 4.70B 4.30 4.70BC 12.70 -CollectorD 3.30 3.81KE 0.36 0.56F 0.36 0.51G 1.27 TYP.H 1.10 -
2n5838 2n5839 2n5840.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5838 2N5839 2N5840 DESCRIPTION With TO-3 package Low collector-emitter saturation voltage APPLICATIONS For use in switching power supply applications and other inductive switching circuits. PINNING PIN DESCRIPTION1 Base 2 Emitter3 CollectorFig.1 simplified outline (TO-3) and symbol Absolute max
2n5838 2n5839 2n5840.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5838 2N5839 2N5840 DESCRIPTION With TO-3 package Low collector saturation voltage High breakdown voltage APPLICATIONS For use in switching power supply and other inductive switching circuits. PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 Collecto
Datasheet: 2N5825 , 2N5826 , 2N5827 , 2N5827A , 2N5828 , 2N5828A , 2N5829 , 2N583 , 13007 , 2N5831 , 2N5832 , 2N5833 , 2N5834 , 2N5835 , 2N5836 , 2N5837 , 2N5838 .
