2SB1198K Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SB1198K
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 180 MHz
Collector Capacitance (Cc): 11 pF
Forward Current Transfer Ratio (hFE), MIN: 120
Noise Figure, dB: -
Package: SMT3 SC-59
2SB1198K Transistor Equivalent Substitute - Cross-Reference Search
2SB1198K Datasheet (PDF)
2sb1198k.pdf
TransistorsLow-frequency Transistor (*80V, *0.5A)2SB1198KFFeatures FExternal dimensions (Unit:s mm)1) Low VCE(sat).VCE(sat) = *0.2V (Typ.)(IC / IB = *0.5A / *50mA)2) High breakdown voltage.BVCEO = *80V3) Complements the 2SD1782K.FStructureEpitaxial planar typePNP silicon transistorSOT-89FAbsolute maximum ratings (Ta = 25_C)FElectrical characteristics (Ta = 25_C)
2sb1198k sot-23-3l.pdf
2SB1198K SOT-23-3L Transistor(PNP)1. BASE SOT-23-3L2. EMITTER 2.923. COLLECTOR 0.351.17Features2.80 1.60 Low VCE(sat): VCE(sat)=-0.2V(Typ.)(IC=-0.5A,IB=-50mA) High breakdown voltage BVCEO=-80V Complements the 2SD1782K 0.151.90Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collect
2sb1198k.pdf
SMD Type TransistorsPNP Transistors2SB1198KSOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Collector Current Capability IC=-0.5A Collector Emitter Voltage VCEO=-80V 1 2+0.1+0.050.95 -0.1 0.1 -0.01 Complementary to 2SD1782K+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collec
2sb1198kfra.pdf
TransistorsAEC-Q101 QualifiedLow-frequency Transistor (*80V, *0.5A)2SB1198KFRA2SB1198KFFeatures FExternal dimensions (Unit:s mm)1) Low VCE(sat).VCE(sat) = *0.2V (Typ.)(IC / IB = *0.5A / *50mA)2) High breakdown voltage.BVCEO = *80V2SD1782KFRA3) Complements the 2SD1782K.FStructureEpitaxial planar typePNP silicon transistorFAbsolute maximum ratings (Ta = 25_C)FE
2sb1198.pdf
UNISONIC TECHNOLOGIES CO., LTD 2SB1198 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY PNP TRANSISTOR DESCRIPTION The UTC 2SB1198 is an epitaxial planar type PNP silicontransistor. FEATURES * High breakdown voltage : BVCEO= -80V * Low VCE(sat) : VCE(sat)= -0.2V (Typ) (IC/IB = -0.5A/-50mA) ORDERING INFORMATION Pin Assignment Ordering Number Package Packing
2sb1198.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate TransistorsSOT-232SB1198 TRANSISTOR (PNP)FEATURES 1. BASE Low VCE(sat)2. EMITTER High breakdown voltage3. COLLECTORMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: NTE2343
