All Transistors. 2N5835 Datasheet

 

2N5835 Datasheet and Replacement


   Type Designator: 2N5835
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 15 V
   Maximum Collector-Emitter Voltage |Vce|: 10 V
   Maximum Emitter-Base Voltage |Veb|: 3 V
   Maximum Collector Current |Ic max|: 0.015 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 2500 MHz
   Collector Capacitance (Cc): 0.8 pF
   Forward Current Transfer Ratio (hFE), MIN: 25
   Noise Figure, dB: -
   Package: TO72
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2N5835 Datasheet (PDF)

 9.2. Size:294K  fairchild semi
2n5830.pdf pdf_icon

2N5835

Discrete POWER & SignalTechnologies2N5830C TO-92BENPN General Purpose AmplifierThis device is designed for general purpose highvoltage amplifiers and gas discharge display driving. Sourcedfrom Process 16. See 2N5551 for characteristics.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 100 VV Collector-

 9.3. Size:67K  mcc
2n5832.pdf pdf_icon

2N5835

MCCMicro Commercial Components21201 Itasca Street Chatsworth 2N5832CA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Through Hole PackagePlastic-case BipolarNPN TransistorPin Configuration Bottom View C B EElectrical Characteristics @ 25C Unless Otherwise SpecifiedTO-92Symbol Parameter Min Max UnitsA EOFF CHARACTERISTICS V(BR)CEO Collector-Emitt

 9.4. Size:379K  no
2n5839.pdf pdf_icon

2N5835

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: 2N2854 | 2N1337 | 2N1317 | 2N1438 | 2N3671 | 2N1482 | 2N5405

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