2N5835 Datasheet. Specs and Replacement
Type Designator: 2N5835 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 15 V
Maximum Collector-Emitter Voltage |Vce|: 10 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 0.015 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 2500 MHz
Collector Capacitance (Cc): 0.8 pF
Forward Current Transfer Ratio (hFE), MIN: 25
Package: TO72
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2N5835 datasheet
Discrete POWER & Signal Technologies 2N5830 C TO-92 B E NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display driving. Sourced from Process 16. See 2N5551 for characteristics. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 100 V V Collector-... See More ⇒
MCC Micro Commercial Components 21201 Itasca Street Chatsworth 2N5832 CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features Through Hole Package Plastic-case Bipolar NPN Transistor Pin Configuration Bottom View C B E Electrical Characteristics @ 25 C Unless Otherwise Specified TO-92 Symbol Parameter Min Max Units A E OFF CHARACTERISTICS V(BR)CEO Collector-Emitt... See More ⇒
Detailed specifications: 2N5828A, 2N5829, 2N583, 2N5830, 2N5831, 2N5832, 2N5833, 2N5834, BC337, 2N5836, 2N5837, 2N5838, 2N5839, 2N583A, 2N584, 2N5840, 2N5841
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History: 2SC3545 | MMUN2234 | BFR71 | 2N3636 | A1320 | 2SB955 | 2SA811C6
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