DTB713ZE Datasheet. Specs and Replacement

Type Designator: DTB713ZE  📄📄 

Material of Transistor: Si

Polarity: Pre-Biased-PNP

Built in Bias Resistor R1 = 1 kOhm

Built in Bias Resistor R2 = 10 kOhm

Typical Resistor Ratio R1/R2 = 0.1

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.15 W

Maximum Collector-Emitter Voltage |Vce|: 30 V

Maximum Emitter-Base Voltage |Veb|: 10 V

Maximum Collector Current |Ic max|: 0.2 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 260 MHz

Forward Current Transfer Ratio (hFE), MIN: 140

Noise Figure, dB: -

Package: EMT3

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DTB713ZE datasheet

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DTB713ZE

-200mA / -30V Low VCE (sat) Digital transistors (with built-in resistors) DTB713ZE / DTB713ZM Applications Dimensions (Unit mm) Inverter, Interface, Driver DTB713ZE 1.6 0.7 0.55 0.3 Feature ( ) 3 1) VCE (sat) is lower than conventional products. 2) Built-in bias resistors enable the configuration of ( ) ( ) 2 1 0.2 0.2 an inverter circuit without connecting extern... See More ⇒

Detailed specifications: DTB523YE, DTB523YM, DTB543EE, DTB543EM, DTB543XE, DTB543XM, DTB543ZE, DTB543ZM, 2SC5198, DTB713ZM, DTB723YE, DTB723YM, DTB743EE, DTB743EM, DTB743XE, DTB743XM, DTB743ZE

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