All Transistors. DTB713ZM Datasheet

 

DTB713ZM Datasheet and Replacement


   Type Designator: DTB713ZM
   Material of Transistor: Si
   Polarity: Pre-Biased-PNP
   Built in Bias Resistor R1 = 1 kOhm
   Built in Bias Resistor R2 = 10 kOhm
   Typical Resistor Ratio R1/R2 = 0.1
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 0.2 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 260 MHz
   Forward Current Transfer Ratio (hFE), MIN: 140
   Noise Figure, dB: -
   Package: SC-105AA VMT3 SOT723
 

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DTB713ZM Datasheet (PDF)

 7.1. Size:178K  rohm
 dtb713z dtb713ze.pdf pdf_icon

DTB713ZM

-200mA / -30V Low VCE (sat) Digital transistors (with built-in resistors) DTB713ZE / DTB713ZM Applications Dimensions (Unit : mm) Inverter, Interface, Driver DTB713ZE1.6 0.7 0.550.3 Feature ( )31) VCE (sat) is lower than conventional products. 2) Built-in bias resistors enable the configuration of ( ) ( )2 10.2 0.2an inverter circuit without connecting extern

Datasheet: DTB523YM , DTB543EE , DTB543EM , DTB543XE , DTB543XM , DTB543ZE , DTB543ZM , DTB713ZE , D965 , DTB723YE , DTB723YM , DTB743EE , DTB743EM , DTB743XE , DTB743XM , DTB743ZE , DTB743ZM .

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