DTC123JEB Datasheet. Specs and Replacement

Type Designator: DTC123JEB  📄📄 

Material of Transistor: Si

Polarity: Pre-Biased-NPN

Built in Bias Resistor R1 = 2.2 kOhm

Built in Bias Resistor R2 = 47 kOhm

Typical Resistor Ratio R1/R2 = 0.047

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.15 W

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 12 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 250 MHz

Forward Current Transfer Ratio (hFE), MIN: 80

Noise Figure, dB: -

Package: SC-89 EMT3F SOT416FL

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DTC123JEB datasheet

 ..1. Size:152K  rohm

dtc123jeb.pdf pdf_icon

DTC123JEB

100mA / 50V Digital transistors (with built-in resistors) DTC123JEB Applications Dimensions (Unit mm) Inverter, Interface, Driver EMT3F 1.6 0.7 0.26 Features 1) Built-in bias resistors enable the configuration of (3) an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors (1) (2) ... See More ⇒

 6.1. Size:54K  motorola

pdtc123jef 1.pdf pdf_icon

DTC123JEB

DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PDTC123JEF NPN resistor-equipped transistor 1999 May 27 Preliminary specification Philips Semiconductors Preliminary specification NPN resistor-equipped transistor PDTC123JEF FEATURES Built-in bias resistors R1 and R2 (typ. 2.2 k and 47 k respectively) 3 handbook, halfpage 3 Simplification of circuit design R1 1 Red... See More ⇒

 6.2. Size:55K  motorola

pdtc123je 3.pdf pdf_icon

DTC123JEB

DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTC123JE NPN resistor-equipped transistor 1999 May 21 Product specification Supersedes data of 1998 Aug 03 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC123JE FEATURES Built-in bias resistors R1 and R2 (typ. 2.2 and 47 k respectively) Simplification of circuit design handbook, halfpage 3 3... See More ⇒

 6.3. Size:54K  philips

pdtc123jef 1.pdf pdf_icon

DTC123JEB

DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PDTC123JEF NPN resistor-equipped transistor 1999 May 27 Preliminary specification Philips Semiconductors Preliminary specification NPN resistor-equipped transistor PDTC123JEF FEATURES Built-in bias resistors R1 and R2 (typ. 2.2 k and 47 k respectively) 3 handbook, halfpage 3 Simplification of circuit design R1 1 Red... See More ⇒

Detailed specifications: DTC114YEB, DTC114YM, DTC114YUA, DTC114YUB, DTC115EEB, DTC115EM, DTC123EE, DTC123EM, D882, DTC123JM, DTC123JUB, DTC123YE, DTC124EEB, DTC124EM, DTC124EUB, DTC124XM, DTC143EEB

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