DTD513ZE Datasheet. Specs and Replacement

Type Designator: DTD513ZE  📄📄 

Material of Transistor: Si

Polarity: Pre-Biased-NPN

Built in Bias Resistor R1 = 1 kOhm

Built in Bias Resistor R2 = 10 kOhm

Typical Resistor Ratio R1/R2 = 0.1

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.15 W

Maximum Collector-Emitter Voltage |Vce|: 12 V

Maximum Emitter-Base Voltage |Veb|: 10 V

Maximum Collector Current |Ic max|: 0.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 260 MHz

Forward Current Transfer Ratio (hFE), MIN: 140

Noise Figure, dB: -

Package: EMT3

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DTD513ZE datasheet

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DTD513ZE

500mA / 12V Low VCE (sat) Digital transistors (with built-in resistors) DTD513ZE / DTD513ZM Applications Dimensions (Unit mm) Inverter, Interface, Driver DTD513ZE 1.6 0.7 0.55 0.3 ( ) 3 Feature 1) VCE (sat) is lower than conventional products. ( ) ( ) 2 1 0.2 0.2 2) Built-in bias resistors enable the configuration of 0.15 (1) GND 0.5 0.5 an inverter circuit wit... See More ⇒

Detailed specifications: DTC143ZUB, DTC144EEB, DTC144EM, DTC144EUB, DTC144WE, DTD113ZK, DTD113ZU, DTD123YK, BC558, DTD513ZM, DTD523YE, DTD523YM, DTD543EE, DTD543EM, DTD543XE, DTD543XM, DTD543ZE

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