All Transistors. DTDG23YP Datasheet

 

DTDG23YP Datasheet and Replacement


   Type Designator: DTDG23YP
   SMD Transistor Code: E02
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN
   Built in Bias Resistor R1 = 2.2 kOhm
   Built in Bias Resistor R2 = 10 kOhm
   Typical Resistor Ratio R1/R2 = 0.22
   Maximum Collector Power Dissipation (Pc): 1.5 W
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 40 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 80 MHz
   Forward Current Transfer Ratio (hFE), MIN: 300
   Noise Figure, dB: -
   Package: MPT3
 

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DTDG23YP Datasheet (PDF)

 ..1. Size:64K  rohm
 dtdg23yp.pdf pdf_icon

DTDG23YP

DTDG23YP Transistors 1A / 60V Digital transistor (with built-in resistors and zener diode) DTDG23YP Applications External dimensions (Unit : mm) Inverter, Interface, Driver MPT34.51.5 Features 1.61) High DC current gain. (Min. 300 at VO / IO=2V / 0.5A) 2) Low Vo(on). (Typ. 0.4V at IO / II=500mA / 5mA) (1) (2) (3)3) Built-in zener diode gives strong protection aga

 ..2. Size:42K  rohm
 dtdg23yp e02 sot89.pdf pdf_icon

DTDG23YP

(96-294-B114

Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N5401 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .

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