All Transistors. KT815B9 Datasheet

 

KT815B9 Datasheet and Replacement


   Type Designator: KT815B9
   SMD Transistor Code: КТ815Б9
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 10 W
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 1.5 A
   Max. Operating Junction Temperature (Tj): 125 °C
   Transition Frequency (ft): 40 MHz
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: KT-89
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KT815B9 Datasheet (PDF)

 9.1. Size:696K  russia
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KT815B9

 9.2. Size:211K  inchange semiconductor
 kt815a.pdf pdf_icon

KT815B9

isc Silicon NPN Power Transistor KT815ADESCRIPTIONHigh Collector Current-I = 1.5ACHigh Collector-Emitter Breakdown Voltage-: V = 40V(Min)(BR)CEOGood Linearity of hFELow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: BCY98 | KT815V9 | GES6004 | D64VP4 | BFY44 | BC548B | 3DA30A

Keywords - KT815B9 transistor datasheet

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