KT815G9 Datasheet. Specs and Replacement

Type Designator: KT815G9  📄📄 

SMD Transistor Code: КТ815Г9

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 10 W

Maximum Collector-Emitter Voltage |Vce|: 100 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 1.5 A

Max. Operating Junction Temperature (Tj): 125 °C

Electrical Characteristics

Transition Frequency (ft): 40 MHz

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: KT-89

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KT815G9 datasheet

 9.1. Size:696K  russia

 kt815a-b-v-g.pdf pdf_icon

KT815G9

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 9.2. Size:211K  inchange semiconductor

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KT815G9

isc Silicon NPN Power Transistor KT815A DESCRIPTION High Collector Current-I = 1.5A C High Collector-Emitter Breakdown Voltage- V = 40V(Min) (BR)CEO Good Linearity of h FE Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) ... See More ⇒

Detailed specifications: KT8126A1, KT8126B1, KT814A9, KT814B9, KT814G9, KT814V9, KT815A9, KT815B9, 2SC4793, KT815V9, KT816A9, KT816B9, KT816G9, KT816V9, KT8170A1, KT8170B1, KT817A9

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