All Transistors. KT815G9 Datasheet

 

KT815G9 Datasheet and Replacement


   Type Designator: KT815G9
   SMD Transistor Code: КТ815Г9
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 10 W
   Maximum Collector-Emitter Voltage |Vce|: 100 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 1.5 A
   Max. Operating Junction Temperature (Tj): 125 °C
   Transition Frequency (ft): 40 MHz
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: KT-89
 

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KT815G9 Datasheet (PDF)

 9.1. Size:696K  russia
 kt815a-b-v-g.pdf pdf_icon

KT815G9

 9.2. Size:211K  inchange semiconductor
 kt815a.pdf pdf_icon

KT815G9

isc Silicon NPN Power Transistor KT815ADESCRIPTIONHigh Collector Current-I = 1.5ACHigh Collector-Emitter Breakdown Voltage-: V = 40V(Min)(BR)CEOGood Linearity of hFELow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)

Datasheet: KT8126A1 , KT8126B1 , KT814A9 , KT814B9 , KT814G9 , KT814V9 , KT815A9 , KT815B9 , MJE340 , KT815V9 , KT816A9 , KT816B9 , KT816G9 , KT816V9 , KT8170A1 , KT8170B1 , KT817A9 .

Keywords - KT815G9 transistor datasheet

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