KT817G9 Datasheet. Specs and Replacement

Type Designator: KT817G9  📄📄 

SMD Transistor Code: КТ817Г9

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 25 W

Maximum Collector-Emitter Voltage |Vce|: 100 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 3 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 3 MHz

Forward Current Transfer Ratio (hFE), MIN: 25

Noise Figure, dB: -

Package: KT-89

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KT817G9 datasheet

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KT817G9

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Detailed specifications: KT816A9, KT816B9, KT816G9, KT816V9, KT8170A1, KT8170B1, KT817A9, KT817B9, 8050, KT817V9, KT8212A, KT8212B, KT8212V, KT8213A, KT8213B, KT8213V, KT8214A

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