KT837V1-IM Datasheet. Specs and Replacement
Type Designator: KT837V1-IM 📄📄
SMD Transistor Code: КТ837В1-ИМ
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 15 V
Maximum Collector Current |Ic max|: 7.5 A
Max. Operating Junction Temperature (Tj): 100 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 50
Package: KT-92
📄📄 Copy
KT837V1-IM Substitution
- BJT ⓘ Cross-Reference Search
KT837V1-IM datasheet
NO PDF data!
Detailed specifications: KT837L1-IM, KT837M1-IM, KT837N1-IM, KT837P1-IM, KT837R1-IM, KT837S1-IM, KT837T1-IM, KT837U1-IM, S8050, KT837Zh, KT837Zh1-IM, KT872G, KT872V, KT918A-2, KT918B-2, KT938B-2, KT939A
Keywords - KT837V1-IM pdf specs
KT837V1-IM cross reference
KT837V1-IM equivalent finder
KT837V1-IM pdf lookup
KT837V1-IM substitution
KT837V1-IM replacement
BJT Parameters and How They Relate
History: KT837Zh | BFX10 | KTD8303A9 | TPCP8507 | KT363A | NB013H | 2T3117A
🌐 : EN ES РУ
LIST
Last Update
BJT: ZDT6705 | GA1L4Z | GA1A4M | SBT42 | 2SA200-Y | 2SA200-O
Popular searches
mpsa65 | 2sa794 | 2sa816 | 2sc897 datasheet | 2sd389 | mp41 transistor | nkt275 datasheet | 2sd947
