KTD540A Datasheet, Equivalent, Cross Reference Search
Type Designator: KTD540A
SMD Transistor Code: КТД540А
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.625 W
Maximum Collector-Base Voltage |Vcb|: 90 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 125 °C
Forward Current Transfer Ratio (hFE), MIN: 1000
Noise Figure, dB: -
Package: KT26
KTD540A Transistor Equivalent Substitute - Cross-Reference Search
KTD540A Datasheet (PDF)
9.1. Size:68K kec
ktd545.pdf
ktd545.pdf
SEMICONDUCTOR KTD545TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORLOW FREQUENCY POWER AMP, CONVERTERELECTRONIC GOVERNOR APPLICATIONS B CFEATURES Low Saturation Voltage : VCE(sat)=0.3V(Max.) at IC=0.5A.N DIM MILLIMETERS Complementary to KTB598.A 4.70 MAXEKB 4.80 MAXGC 3.70 MAXDD 0.45E 1.00F 1.27G 0.85MAXIMUM RATING (Ta=25 )H 0.45_HJ 14.00 + 0.50
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
