3CD6D Specs and Replacement
Type Designator: 3CD6D
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 50 W
Maximum Collector-Base Voltage |Vcb|: 110 V
Maximum Collector-Emitter Voltage |Vce|: 110 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 5 A
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 10
Package: TO3
3CD6D Substitution
- BJT ⓘ Cross-Reference Search
3CD6D datasheet
isc Silicon PNP Power Transistor 3CD6D DESCRIPTION Collector-Emitter Breakdown Voltage- V = -110V(Min.) (BR)CEO DC Current Gain- h =10-180@I = -2.5A FE C Collector-Emitter Saturation Voltage- V )= -1.5V(Max)@ I = -2.5A CE(sat C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier Low speed switching P... See More ⇒
Detailed specifications: 2SD2579, 2SD2580, 2SD2586, 2SD2599, 2SD2634, 2SD5072, 2SD5075T, 2SD5702, BC337, 3DD200, 3DD201, 3DD207, 3DD301B, 3DD301C, 3DD301D, 3DD303A, 3DD303B
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