3DD301B Specs and Replacement

Type Designator: 3DD301B

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 30 W

Maximum Collector-Base Voltage |Vcb|: 80 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 5 A

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: TO3

 3DD301B Substitution

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3DD301B datasheet

 ..1. Size:202K  inchange semiconductor

 3dd301b.pdf pdf_icon

3DD301B

isc Silicon NPN Power Transistor 3DD301B DESCRIPTION Collector-Emitter Breakdown Voltage- V = 50V(Min) (BR)CEO Collector-Emitter Saturation Voltage- V = 2.0V(Max) @I = 3A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for B/W TV vertical output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ... See More ⇒

 8.1. Size:178K  crhj

 3dd3015a1.pdf pdf_icon

3DD301B

NPN R 3DD3015 A1 3DD3015 A1 NPN VCEO 450 V IC 1.2 A Ptot Ta=25 0.8 W ... See More ⇒

 8.2. Size:146K  crhj

 3dd3015 a3.pdf pdf_icon

3DD301B

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 8.3. Size:178K  crhj

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3DD301B

NPN R 3DD3015 A1 3DD3015 A1 NPN VCEO 450 V IC 1.2 A Ptot Ta=25 0.8 W ... See More ⇒

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Detailed specifications: 2SD2634, 2SD5072, 2SD5075T, 2SD5702, 3CD6D, 3DD200, 3DD201, 3DD207, A1015, 3DD301C, 3DD301D, 3DD303A, 3DD303B, 3DD303C, BU1508AF, BU2506AF, BU2506AX

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