All Transistors. BUT56AF Datasheet

 

BUT56AF Datasheet and Replacement


   Type Designator: BUT56AF
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 50 W
   Maximum Collector-Base Voltage |Vcb|: 1000 V
   Maximum Collector-Emitter Voltage |Vce|: 450 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 8 A
   Transition Frequency (ft): 10 MHz
   Forward Current Transfer Ratio (hFE), MIN: 15
   Noise Figure, dB: -
   Package: TO220FA
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BUT56AF Datasheet (PDF)

 ..1. Size:214K  inchange semiconductor
 but56af.pdf pdf_icon

BUT56AF

isc Silicon NPN Power Transistor BUT56AFDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 450V(Min.)CEO(SUS)High Speed SwitchingHigh Power DissipationWith TO-220Fa Package100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching mode power supply applications.ABSOLUTE MAXIM

 8.1. Size:119K  inchange semiconductor
 but56 but56a.pdf pdf_icon

BUT56AF

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUT56 BUT56A DESCRIPTION With TO-220C package High voltage;high speed High power dissipation APPLICATIONS Switching mode power supply PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsolut maximum ratings (Ta=25) SYMBOL PARAMETER CONDITIONS VALUE

Datasheet: HA9079 , HA9500 , HA9501 , HA9502 , HA9531 , HA9531A , HA9532 , HA9532A , D667 , HCT2907A , HCT2907M , HDA412 , HDA420 , HDA496 , HEP637 , HEPG0001 , HEPG0002 .

History: KT8107D2 | D11C11B1 | F5H2201 | UN9217R | 2N1056 | 2SC999A | ECG2306

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