BUT56AF Specs and Replacement
Type Designator: BUT56AF
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 50 W
Maximum Collector-Base Voltage |Vcb|: 1000 V
Maximum Collector-Emitter Voltage |Vce|: 450 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 8 A
Electrical Characteristics
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN: 15
Package: TO220FA
BUT56AF Substitution
- BJT ⓘ Cross-Reference Search
BUT56AF datasheet
isc Silicon NPN Power Transistor BUT56AF DESCRIPTION Collector-Emitter Sustaining Voltage- V = 450V(Min.) CEO(SUS) High Speed Switching High Power Dissipation With TO-220Fa Package 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching mode power supply applications. ABSOLUTE MAXIM... See More ⇒
Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUT56 BUT56A DESCRIPTION With TO-220C package High voltage;high speed High power dissipation APPLICATIONS Switching mode power supply PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolut maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE... See More ⇒
Detailed specifications: BU508DX, BUF405AFP, BUH1015HI, BUH417D, BUH713, BUH715AF, BUL6825, BUT12AX, TIP127, BUW13AW, BUW13W, T06, T2141, T2141F, T2142, T2142F, T25
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