All Transistors. 3DK2222A Datasheet

 

3DK2222A Datasheet, Equivalent, Cross Reference Search

Type Designator: 3DK2222A

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.225 W

Maximum Collector-Base Voltage |Vcb|: 75 V

Maximum Collector-Emitter Voltage |Vce|: 40 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 0.6 A

Transition Frequency (ft): 300 MHz

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: SOT23

3DK2222A Transistor Equivalent Substitute - Cross-Reference Search

 

3DK2222A Datasheet (PDF)

0.1. 3dk2222a.pdf Size:954K _lge

3DK2222A
3DK2222A

3DK2222A(NPN) TO-92 Bipolar TransistorsTO-92 1. EMITTER 4.45 2. BASE 5.21 3. COLLECTOR 4.322.92 5.33FeaturesMIN Epitaxial planar die construction 3.43MINMAXIMUM RATINGS (TA=25 unless otherwise noted) 2.412.67Symbol Parameter Value Units3.182.034.19VCBO Collector-Base Voltage 75 V2.671.14VCEO Collector-Emitter Voltage 40 V 1.402.032.67

0.2. 3dk2222a sot-23.pdf Size:997K _lge

3DK2222A
3DK2222A

3DK2222A SOT-23 Transistor(NPN)1. BASE SOT-232.EMITTER 3.COLLECTOR Features Epitaxial planar die construction Complementary PNP Type available(MMBT2907A) MARKING: 1P1 Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 75 V VCEO 40 VCollector-Emitter Voltage VEBO 6 V

 7.1. 3dk2222.pdf Size:164K _china

3DK2222A

3DK2222 NPN PCM TC=25 500 mW ICM 800 mA Tjm 175 Tstg -55~150 V(BR)CBO ICB=0.1mA 60 V V(BR)CEO ICE=0.1mA 30 V V(BR)EBO IEB=0.1mA 5.0 V ICBO VCB=10V 1.0 A ICEO VCB=10V 2.0 A IEBO VEB=4V 1.0 A VBEsat 1.2 IC=200mA V IB=20

Datasheet: BC507FA , BC507FB , BC508 , BC508A , BC508B , BC508C , BC508F , BC508FA , D882 , BC508FC , BC509 , BC509B , BC509C , BC509F , BC509FB , BC509FC , BC510 .

 

 
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