All Transistors. 3DK2222A Datasheet

 

3DK2222A Datasheet, Equivalent, Cross Reference Search

Type Designator: 3DK2222A

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.225 W

Maximum Collector-Base Voltage |Vcb|: 75 V

Maximum Collector-Emitter Voltage |Vce|: 40 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 0.6 A

Transition Frequency (ft): 300 MHz

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: SOT23

3DK2222A Transistor Equivalent Substitute - Cross-Reference Search

 

3DK2222A Datasheet (PDF)

1.1. 3dk2222a.pdf Size:954K _lge

3DK2222A
3DK2222A

3DK2222A(NPN) TO-92 Bipolar Transistors TO-92 1. EMITTER 4.45 2. BASE 5.21 3. COLLECTOR 4.32 2.92 5.33 Features MIN Epitaxial planar die construction 3.43 MIN MAXIMUM RATINGS (TA=25? unless otherwise noted) 2.41 2.67 Symbol Parameter Value Units 3.18 2.03 4.19 VCBO Collector-Base Voltage 75 V 2.67 1.14 VCEO Collector-Emitter Voltage 40 V 1.40 2.03 2.67 VEBO

1.2. 3dk2222a sot-23.pdf Size:997K _lge

3DK2222A
3DK2222A

3DK2222A SOT-23 Transistor(NPN) 1. BASE SOT-23 2.EMITTER 3.COLLECTOR Features Epitaxial planar die construction Complementary PNP Type available(MMBT2907A) MARKING: 1P1 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 75 V VCEO 40 V Collector-Emitter Voltage VEBO 6 V Emi

 3.1. 3dk2222.pdf Size:164K _china

3DK2222A

3DK2222 型 NPN 硅小功率开关晶体管 参数符号 测试条件 规范值 单位 PCM TC=25℃ 500 mW 极 ICM 800 mA 限 Tjm 175 ℃ 值 Tstg -55~150 ℃ V(BR)CBO ICB=0.1mA ≥60 V V(BR)CEO ICE=0.1mA ≥30 V V(BR)EBO IEB=0.1mA ≥5.0 V ICBO VCB=10V ≤1.0 μA 直 ICEO VCB=10V ≤2.0 μA 流 参 IEBO VEB=4V ≤1.0 μA 数 VBEsat ≤1.2 IC=200mA V IB=20

Datasheet: 2SC4323 , 2SC4324 , 2SC4325 , 2SC4326 , 2SC4327 , 2SC4328 , 2SC4329 , 2SC433 , BC237 , 2SC4331 , 2SC4332 , 2SC4333 , 2SC4334 , 2SC4335 , 2SC4336 , 2SC4337 , 2SC4338 .

 
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