3DK2222A Datasheet, Equivalent, Cross Reference Search
Type Designator: 3DK2222A
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.225 W
Maximum Collector-Base Voltage |Vcb|: 75 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.6 A
Transition Frequency (ft): 300 MHz
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: SOT23
3DK2222A Transistor Equivalent Substitute - Cross-Reference Search
3DK2222A Datasheet (PDF)
3dk2222a.pdf
3DK2222A(NPN) TO-92 Bipolar TransistorsTO-92 1. EMITTER 4.45 2. BASE 5.21 3. COLLECTOR 4.322.92 5.33FeaturesMIN Epitaxial planar die construction 3.43MINMAXIMUM RATINGS (TA=25 unless otherwise noted) 2.412.67Symbol Parameter Value Units3.182.034.19VCBO Collector-Base Voltage 75 V2.671.14VCEO Collector-Emitter Voltage 40 V 1.402.032.67
3dk2222a sot-23.pdf
3DK2222A SOT-23 Transistor(NPN)1. BASE SOT-232.EMITTER 3.COLLECTOR Features Epitaxial planar die construction Complementary PNP Type available(MMBT2907A) MARKING: 1P1 Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 75 V VCEO 40 VCollector-Emitter Voltage VEBO 6 V
3dk2222.pdf
3DK2222 NPN PCM TC=25 500 mW ICM 800 mA Tjm 175 Tstg -55~150 V(BR)CBO ICB=0.1mA 60 V V(BR)CEO ICE=0.1mA 30 V V(BR)EBO IEB=0.1mA 5.0 V ICBO VCB=10V 1.0 A ICEO VCB=10V 2.0 A IEBO VEB=4V 1.0 A VBEsat 1.2 IC=200mA V IB=20
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
