SC118 Datasheet, Equivalent, Cross Reference Search
Type Designator: SC118
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.75 W
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Collector Current |Ic max|: 0.1 A
Transition Frequency (ft): 90 MHz
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package: TO18
SC118 Transistor Equivalent Substitute - Cross-Reference Search
SC118 Datasheet (PDF)
bsy34 sc116 sc117 sc118 sc119 sc206 sc207 sc236 sc237 sc238 sc239 sc307 sc308 sc309.pdf
ksc1187.pdf
KSC1187TV 1st, 2nd Picture IF Amplifier(Forward AGC) High Current Gain Bandwidth Product : fT=700MHz High Power Gain : GPE=24dB (TYP.) at f=45MHzTO-9211. Emitter 2. Base 3. CollectorNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings UnitsVCBO Collector-Base Voltage 30 VVCEO Collector-Emitter Voltage 20
bsc118n10ns8 bsc118n10nsg.pdf
BSC118N10NS GOptiMOS2 Power-TransistorProduct SummaryFeaturesV 100 VDS N-channel, normal levelR 11.8mDS(on),max Excellent gate charge x R product (FOM)DS(on)I 71 AD Very low on-resistance RDS(on) 150 C operating temperaturePG-TDSON-8 Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application Ide
2sc1185.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1185DESCRIPTIONWith TO-3 PackageHigh voltageWide area of safe operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor power amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Vol
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
