SD339 Specs and Replacement

Type Designator: SD339

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 12.5 W

Maximum Collector-Base Voltage |Vcb|: 80 V

Maximum Collector-Emitter Voltage |Vce|: 80 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 1.5 A

Electrical Characteristics

Transition Frequency (ft): 130 MHz

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

Package: SOT89

 SD339 Substitution

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SD339 datasheet

 ..1. Size:303K  gdr

 sd335 sd337 sd339.pdf pdf_icon

SD339

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 ..2. Size:123K  gdr

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SD339

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 ..3. Size:148K  gdr

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SD339

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 0.1. Size:197K  inchange semiconductor

 2sd339.pdf pdf_icon

SD339

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD339 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 90V(Min) (BR) CEO Excellent Safe Operating Area Low Collector-Emitter Saturation Voltage- V )= 1.0V(Max)@ I = 7.5A CE(sat C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpos... See More ⇒

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Detailed specifications: SCE538, SCE539, SCE540, SD168, SD335, SD336, SD337, SD338, 8550, SD340, SD345, SD346, SD347, SD348, SD349, SD350, SD401

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