SD812 Datasheet, Equivalent, Cross Reference Search
Type Designator: SD812
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 50 W
Maximum Collector-Emitter Voltage |Vce|: 200 V
Maximum Collector Current |Ic max|: 4 A
Transition Frequency (ft): 1.5 MHz
Forward Current Transfer Ratio (hFE), MIN: 500
Noise Figure, dB: -
Package: TO3
SD812 Transistor Equivalent Substitute - Cross-Reference Search
SD812 Datasheet (PDF)
sd168 sd335 sd336 sd337 sd338 sd339 sd340 sd345 sd346 sd347 sd348 sd349 sd350 sd600 sd601 sd602 sd802 sd812.pdf
2sd812.pdf
isc Silicon NPN Power Transistor 2SD812DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOGood Linearity of hFEWide Area of Safe OperationComplement to Type 2SB747Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh power amplifier applications.Suitable for 15~20W home stereo output amplifier a
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , BC557 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .