SD812 Specs and Replacement
Type Designator: SD812
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 50 W
Maximum Collector-Emitter Voltage |Vce|: 200 V
Maximum Collector Current |Ic max|: 4 A
Electrical Characteristics
Transition Frequency (ft): 1.5 MHz
Forward Current Transfer Ratio (hFE), MIN: 500
Package: TO3
SD812 Substitution
- BJT ⓘ Cross-Reference Search
SD812 datasheet
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isc Silicon NPN Power Transistor 2SD812 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO Good Linearity of h FE Wide Area of Safe Operation Complement to Type 2SB747 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High power amplifier applications. Suitable for 15 20W home stereo output amplifier a... See More ⇒
Detailed specifications: SD457 , SD458 , SD459 , SD460 , SD600 , SD601 , SD602 , SD802 , S9018 , SF016 , SF018 , SF116 , SF117 , SF118 , SF119 , SF121 , SF122 .
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