3DD13003B PDF Specs and Replacement
Type Designator: 3DD13003B
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.9
W
Maximum Collector-Base Voltage |Vcb|: 700
V
Maximum Collector-Emitter Voltage |Vce|: 400
V
Maximum Emitter-Base Voltage |Veb|: 9
V
Maximum Collector Current |Ic max|: 1.5
A
Max. Operating Junction Temperature (Tj): 150
°C
Electrical Characteristics
Transition Frequency (ft): 4
MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package:
TO92
-
BJT ⓘ Cross-Reference Search
3DD13003B PDF detailed specifications
..1. Size:2520K secos
3dd13003b.pdf 
3DD13003B 1.5A , 700V NPN Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES TO-92 Power switching applications A D Millimeter REF. Min. Max. B A 4.40 4.70 B 4.30 4.70 C 12.70 - D 3.30 3.81 Collector E 0.36 0.56 2 E C F 0.36 0.51 F G 1.27 TYP. H 1.10 - J 2... See More ⇒
..2. Size:711K jiangsu
3dd13003b.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO-92 3DD13003B TRANSISTOR( NPN ) 1. EMITTER 2. COLLECTOR FEATURES 3. BASE power switching applications MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Vol... See More ⇒
..3. Size:183K lge
3dd13003b.pdf
3DD13003B(NPN) TO-92 Bipolar Transistors TO-92 1. EMITTER 4.45 2. COLLECTOR 5.21 3. BASE 4.32 2.92 5.33 MIN Features power switching applications 3.43 MIN 2.41 2.67 MAXIMUM RATINGS (TA=25 unless otherwise noted) 3.18 2.03 4.19 Symbol Parameter Value Units 2.67 1.14 VCBO Collector-Base Voltage 700 V 1.40 2.03 2.67 VCEO Collector-Emitter Voltage 400 V ... See More ⇒
..4. Size:140K wietron
3dd13003b.pdf
WEITRON 3DD13003B NPN Plastic-Encapsulate Transistor P b Lead(Pb)-Free 1. EMITTER 2. COLLECTOR 3. BASE FEATURES power switching applications TO-92 MAXIMUM RATINGS (T unless otherwise noted) A=25 C Parameter Symbol Value Units Collector-Base Voltage V VCBO 700 Collector-Emitter Voltage V VCEO 400 Emitter-Base Voltage 9 V VEBO A Collector Current -Continuous IC 1.5 Col... See More ⇒
6.1. Size:5166K jiangsu
3dd13003.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate Transistors 3DD13003 TRANSISTOR ( NPN ) TO-252-2L FEATURES 1. BASE Power Switching Applications 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS(TA=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base V... See More ⇒
6.2. Size:812K jiangsu
3dd13003n3.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistor 3DD13003N3 TRANSISTOR (NPN) TO-126 FEATURES 1 . BASE Power switching applications Good high temperature 2. COLLECTOR Low saturation voltage 3. EMITTER High speed switching Equivalent Circuit Logo 13003N3=Device code 13003N3 ORDERING INFORMATION Part Number Package Packi... See More ⇒
6.3. Size:246K lge
3dd13003 to-220-3l.pdf
3DD13003(NPN) TO-220 Transistor TO-220 1. BASE 2. COLLECTOR 3. EMITTER 3 2 1 Features power switching applications MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V Dimensions in inches and (millimeters) VEBO Emitter-Base Voltage 9 V IC Collector Current -Continuou... See More ⇒
6.4. Size:205K lge
3dd13003 to-126.pdf
3DD13003(NPN) TO-126 Transistor TO-126 1.BASE 2.COLLECTOR 3.EMITTER 3 2 1 Features power switching applications MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2.500 7.400 2.900 1.100 7.800 Symbol Parameter Value Units 1.500 VCBO Collector-Base Voltage 700 V 3.900 3.000 4.100 VCEO Collector-Emitter Voltage 400 V 3.200 10.600 0.000 VEBO Emitter-Base V... See More ⇒
6.5. Size:761K jilin sino
3dd13003a.pdf
NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR R 3DD13003A MAIN CHARACTERISTICS Package I 1.5A C V 450V CEO P (TO-92) 1W C P (DPAK/IPAK) 10W C P (TO-126) 20W C P (TO-220) 40W C TO-92-FJ TO-126 APPLICATIONS TO-220 IPAK Battery changer Electronic ballast... See More ⇒
6.6. Size:416K jilin sino
3dd13003v1d.pdf
NPN MIDDLING VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR R 3DD13003V1D APPLICATIONS Package Energy-saving ligh Electronic ballasts Electronic transformer Commonly power amplifier circuit FEATURES M... See More ⇒
6.8. Size:418K blue-rocket-elect
br3dd13003vk1k.pdf
MJE13003VK1(BR3DD13003VK1K) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features High Voltage Capability High Speed Switching. / Applications 110V Suitable for 110V circuit mode, fluore... See More ⇒
6.9. Size:446K blue-rocket-elect
br3dd13003vk7r.pdf
MJE13003VK7(BR3DD13003VK7R) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220 NPN Silicon NPN transistor in a TO-220 Plastic Package. / Features RoHS High voltage capability, high speed switching, wide soa, RoHS compliant. / Applications 110V ... See More ⇒
6.60. Size:1159K kexin
3dd13003.pdf
SMD Type Transistors NPN Transistors 3DD13003 1.70 0.1 Features Collector Current Capability IC=1.5A Collector Emitter Voltage VCEO=400V 0.42 0.1 0.46 0.1 Power Switching Applications 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 700 Collector - Emitter Voltage VCEO 400 V Emi... See More ⇒
6.62. Size:151K wuxi china
3dd13003h6d.pdf
NPN R 3DD13003 H6D 3DD13003 H6D VCEO 400 V NPN IC 1.8 A Ptot Tc=25 50 W ... See More ⇒
6.66. Size:150K wuxi china
3dd13003e6d.pdf
NPN R 3DD13003 E6D 3DD13003 E6D VCEO 400 V NPN IC 1.3 A Ptot Tc=25 40 W ... See More ⇒
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