BCP157 Datasheet. Specs and Replacement
Type Designator: BCP157 📄📄
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 1.2 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 140 MHz
Collector Capacitance (Cc): 30 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Package: SOT89
BCP157 Substitution
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BCP157 datasheet
BCP157 PNP Silicon Elektronische Bauelemente Medium Power Transistor RoHS Compliant Product Features SOT-89 1. -60Volt V CEO 1.BASE 2. 3 Amp continuous current D 2.COLLECTOR D1 A 3. Low saturation voltage 3.EMITTER b1 Parameter Symbol Limits Unit Collector-base voltage VCBO -80 V b C e Collector-emitter voltage VCEO -60 ... See More ⇒
BCP156 NPN Silicon Elektronische Bauelemente Planar High Performance Transistor RoHS Compliant Product SOT-89 Description The BCP156 is designed for general purpose switching and amplifier applications. Features * 3 Amp Continuous Current * 60 Volt VCEO * Low Saturation Voltage Millimeter Millimeter REF. REF. Min. Max. Min. Max. A 4.4 4.6 G 3.00 REF. B 4.05 4.25 H 1.50 REF... See More ⇒
Detailed specifications: SS8550W, STB1277, UMX18N, 2SD2118, 3DD13005, B772C, BCP1213, BCP156, 2SD313, BCP1766, BCP1898, BCP195, BCP2098, BCP4672, BCP5401, BCP5551, BCP669A
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