All Transistors. BCP669A Datasheet

 

BCP669A Datasheet and Replacement


   Type Designator: BCP669A
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 1 W
   Maximum Collector-Base Voltage |Vcb|: 180 V
   Maximum Collector-Emitter Voltage |Vce|: 160 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 1.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 140 MHz
   Collector Capacitance (Cc): 14 pF
   Forward Current Transfer Ratio (hFE), MIN: 60
   Noise Figure, dB: -
   Package: SOT89
 

 BCP669A Substitution

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BCP669A Datasheet (PDF)

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BCP669A

BCP669A 1 W, 1.5 A, 180 V NPN Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product SOT-89 A suffix of -C specifies halogen & lead-free FEATURE 4The BCP669A is designed for low frequency power amplifier. 1 23AECB DF GH KJ LMillimeter Millimeter REF. REF. Min. Max. Min. Max. A 4.40 4.60 G 0.40 0.58 B 3.94 4.25 H 1.50 TY

Datasheet: BCP157 , BCP1766 , BCP1898 , BCP195 , BCP2098 , BCP4672 , BCP5401 , BCP5551 , 2SC2655 , BCP772 , BCP869 , BCP882 , BCPA14 , BCPA42 , BCPA94 , BD13003B , CZD1182 .

History: DRA5113Z

Keywords - BCP669A transistor datasheet

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