BCP669A Datasheet, Equivalent, Cross Reference Search
Type Designator: BCP669A
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 180 V
Maximum Collector-Emitter Voltage |Vce|: 160 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 140 MHz
Collector Capacitance (Cc): 14 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: SOT89
BCP669A Transistor Equivalent Substitute - Cross-Reference Search
BCP669A Datasheet (PDF)
..1. Size:372K secos
bcp669a.pdf
bcp669a.pdf
BCP669A 1 W, 1.5 A, 180 V NPN Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product SOT-89 A suffix of -C specifies halogen & lead-free FEATURE 4The BCP669A is designed for low frequency power amplifier. 1 23AECB DF GH KJ LMillimeter Millimeter REF. REF. Min. Max. Min. Max. A 4.40 4.60 G 0.40 0.58 B 3.94 4.25 H 1.50 TY
Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
