BCP669A Specs and Replacement

Type Designator: BCP669A

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 1 W

Maximum Collector-Base Voltage |Vcb|: 180 V

Maximum Collector-Emitter Voltage |Vce|: 160 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 1.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 140 MHz

Collector Capacitance (Cc): 14 pF

Forward Current Transfer Ratio (hFE), MIN: 60

Noise Figure, dB: -

Package: SOT89

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BCP669A datasheet

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BCP669A

BCP669A 1 W, 1.5 A, 180 V NPN Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product SOT-89 A suffix of -C specifies halogen & lead-free FEATURE 4 The BCP669A is designed for low frequency power amplifier. 1 2 3 A E C B D F G H K J L Millimeter Millimeter REF. REF. Min. Max. Min. Max. A 4.40 4.60 G 0.40 0.58 B 3.94 4.25 H 1.50 TY... See More ⇒

Detailed specifications: BCP157, BCP1766, BCP1898, BCP195, BCP2098, BCP4672, BCP5401, BCP5551, 2SC945, BCP772, BCP869, BCP882, BCPA14, BCPA42, BCPA94, BD13003B, CZD1182

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