CZD1182 Datasheet, Equivalent, Cross Reference Search
Type Designator: CZD1182
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 10 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 32 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 50 pF
Forward Current Transfer Ratio (hFE), MIN: 82
Noise Figure, dB: -
Package: TO252
CZD1182 Transistor Equivalent Substitute - Cross-Reference Search
CZD1182 Datasheet (PDF)
..1. Size:253K secos
czd1182.pdf
czd1182.pdf
CZD1182PNP Silicon Elektronische BauelementeGeneral Purpose TransistorTO-2526. 50 0. 152. 30 0. 10 5. 30 0. 10FEATURESC0. 51 0. 05 The CZD1182 is designed for medium power amplifier applicationLow collector saturation voltage: VCE(sat)=-0.5V (Typ.)1. 200. 51 0. 10 RoHS Compliant Product0 10 0.550. 80 0. 10MARKING : 1182 0. 60 10 0.2. 30 0. 10
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
