CZD5103 Datasheet, Equivalent, Cross Reference Search
Type Designator: CZD5103
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 10 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 6 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 210 MHz
Collector Capacitance (Cc): 80 pF
Forward Current Transfer Ratio (hFE), MIN: 120
Noise Figure, dB: -
Package: TO252
CZD5103 Transistor Equivalent Substitute - Cross-Reference Search
CZD5103 Datasheet (PDF)
..1. Size:468K secos
czd5103.pdf
czd5103.pdf
CZD5103 NPN Epitaxial Planar Silicon Transistor Elektronische Bauelemente D-Pack (TO-252)DESCRIPTION The CZD5103 is designed for high speed switching applications. FEATURES A Low saturation voltage, typically VCE(sat)= 0.15V at IC/IB= 3A/0.15A CBD High speed switching, typically Tf = 0.1s at IC= 3A Wide SOAG E Complements to CZD1952 K H FNOP
Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N3055 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
