CZD5103 Specs and Replacement
Type Designator: CZD5103
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 10 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 6 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 210 MHz
Collector Capacitance (Cc): 80 pF
Forward Current Transfer Ratio (hFE), MIN: 120
Package: TO252
CZD5103 Substitution
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CZD5103 datasheet
CZD5103 NPN Epitaxial Planar Silicon Transistor Elektronische Bauelemente D-Pack (TO-252) DESCRIPTION The CZD5103 is designed for high speed switching applications. FEATURES A Low saturation voltage, typically VCE(sat)= 0.15V at IC/IB= 3A/0.15A C B D High speed switching, typically Tf = 0.1 s at IC= 3A Wide SOA G E Complements to CZD1952 K H F N O P... See More ⇒
Detailed specifications: BCPA14, BCPA42, BCPA94, BD13003B, CZD1182, CZD1386, CZD1952, CZD2983, D965, CZD772, KSA928ATL, MMBT2222Q, MMBT2907Q, PZT157, PZT158, PZT159, PZT194
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