PZT5401 Datasheet, Equivalent, Cross Reference Search
Type Designator: PZT5401
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 1.5 W
Maximum Collector-Base Voltage |Vcb|: 160 V
Maximum Collector-Emitter Voltage |Vce|: 150 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 120 MHz
Collector Capacitance (Cc): 6 pF
Forward Current Transfer Ratio (hFE), MIN: 80
Noise Figure, dB: -
Package: SOT223
PZT5401 Transistor Equivalent Substitute - Cross-Reference Search
PZT5401 Datasheet (PDF)
pzt5401.pdf
UNISONIC TECHNOLOGIES CO., LTD. PZT5401 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES * High Collector-Emitter Voltage: VCEO=-150V * High current gain APPLICATIONS * Telephone Switching Circuit * Amplifier ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen-Free 1 2 3 PZT5401L-x-AA3-R PZT5401G-x-AA
pzt5401.pdf
PZT5401PNP Epitaxial Planar TransistorCOLLECTOR2, 4 SOT-223P b Lead(Pb)-Free 41. BASEBASE2.COLLECTOR113.EMITTER24.COLLECTOR33EM ITTERABSOLUTE MAXIMUM RATINGS (TA=25 C)Rating Symbol Value UnitVCBO -160 VCollector to Base VoltageVCEO V-150Collector to Emitter VoltageVCollector to Base Voltage VEBO -5IC(DC) -600 ACollector Current1.5Total Dev
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
History: 2SC6144
