All Transistors. WTD1386 Datasheet

 

WTD1386 Datasheet and Replacement


   Type Designator: WTD1386
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 20 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 20 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 120 MHz
   Collector Capacitance (Cc): 60 pF
   Forward Current Transfer Ratio (hFE), MIN: 82
   Noise Figure, dB: -
   Package: TO252
 

 WTD1386 Substitution

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WTD1386 Datasheet (PDF)

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WTD1386

WTD1386PNP EPITAXIAL PLANAR TRANSISTORP b Lead(Pb)-Free1.BASE32.COLLECTOR23.EMITTER 1Features:* Low VCE(sat) = -0.55(Typ.) (IC/IB=-4A/-0.1A)D-PAK(TO-252)* Excellent DC Current Gain CharacteristicsMechanical Data:* Case : Molded Plastic* Weight : 0.925 gramsABSOLUTE MAXIMUM RATINGS(TA=25C)Rating Symbol Value UnitVCBO-30 VCollector to Base VoltageVCEO-2

Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , TIP35C , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .

History: XC142 | W4401DW | W4501DW | 2N2857C1B

Keywords - WTD1386 transistor datasheet

 WTD1386 cross reference
 WTD1386 equivalent finder
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