WTD1386 pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

WTD1386 Specs and Replacement

Type Designator: WTD1386

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 20 W

Maximum Collector-Base Voltage |Vcb|: 30 V

Maximum Collector-Emitter Voltage |Vce|: 20 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 120 MHz

Collector Capacitance (Cc): 60 pF

Forward Current Transfer Ratio (hFE), MIN: 82

Noise Figure, dB: -

Package: TO252

WTD1386 Substitution

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WTD1386 datasheet

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WTD1386 PNP EPITAXIAL PLANAR TRANSISTOR P b Lead(Pb)-Free 1.BASE 3 2.COLLECTOR 2 3.EMITTER 1 Features * Low VCE(sat) = -0.55(Typ.) (IC/IB=-4A/-0.1A) D-PAK(TO-252) * Excellent DC Current Gain Characteristics Mechanical Data * Case Molded Plastic * Weight 0.925 grams ABSOLUTE MAXIMUM RATINGS(TA=25 C) Rating Symbol Value Unit VCBO -30 V Collector to Base Voltage VCEO -2... See More ⇒

Detailed specifications: S9015LT1 , SS8050LT1 , SS8550LT1 , W4401DW , W4413DW , W4501DW , W4601DW , WTA8921 , B772 , WTD772 , WTD882 , WTM1624 , WTM1766 , WTM1797 , WTM2222A , WTM2907A , WTM3904 .