WTD1386 Datasheet, Equivalent, Cross Reference Search
Type Designator: WTD1386
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 20 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 120 MHz
Collector Capacitance (Cc): 60 pF
Forward Current Transfer Ratio (hFE), MIN: 82
Noise Figure, dB: -
Package: TO252
WTD1386 Transistor Equivalent Substitute - Cross-Reference Search
WTD1386 Datasheet (PDF)
..1. Size:178K wietron
wtd1386.pdf
wtd1386.pdf
WTD1386PNP EPITAXIAL PLANAR TRANSISTORP b Lead(Pb)-Free1.BASE32.COLLECTOR23.EMITTER 1Features:* Low VCE(sat) = -0.55(Typ.) (IC/IB=-4A/-0.1A)D-PAK(TO-252)* Excellent DC Current Gain CharacteristicsMechanical Data:* Case : Molded Plastic* Weight : 0.925 gramsABSOLUTE MAXIMUM RATINGS(TA=25C)Rating Symbol Value UnitVCBO-30 VCollector to Base VoltageVCEO-2
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
